Infineon Technologies - IPB12CN10N G

KEY Part #: K6407289

[1025Stock Ngahau]


    Te waahanga waahanga:
    IPB12CN10N G
    Kaihanga:
    Infineon Technologies
    Whakaahuatanga Taipitopito:
    MOSFET N-CH 100V 67A TO263-3.
    Ko te wa kaiarahi paerewa a te kaihanga:
    I roto i te taonga
    Te whare noho:
    Kotahi Tau
    Chip Mai:
    Hong Kong
    RoHS:
    Te tikanga utu:
    Te ara kaipuke:
    Ngā Kāwai Whānau:
    KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Diode - Zener - Tuhinga, Transistors - Bipolar (BJT) - Arrays, Diode - Zener - Kotahi, Transistors - JFET, Tauhou - IGBT - Mahi, Diode - Kaiwhiwhi - Kotahi, Tauhoko - SCR - Mahi and Te Tauira P taraihi Mana ...
    Whakapai Tinana:
    We specialize in Infineon Technologies IPB12CN10N G electronic components. IPB12CN10N G can be shipped within 24 hours after order. If you have any demands for IPB12CN10N G, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IPB12CN10N G Nga Hua Hua

    Te waahanga waahanga : IPB12CN10N G
    Kaihanga : Infineon Technologies
    Whakaahuatanga : MOSFET N-CH 100V 67A TO263-3
    Toa : OptiMOS™
    Wāhanga wahi : Obsolete
    Momo FET : N-Channel
    Hangarau : MOSFET (Metal Oxide)
    Whakahinuhinu ki te Rauemi Waiata (Vds) : 100V
    Akuanui - Tonu Tonu (Id) @ 25 ° C : 67A (Tc)
    Koraha Motuhake (RW RW On, Min Rds I) : 10V
    Rds On (Max) @ Id, Vgs : 12.6 mOhm @ 67A, 10V
    Vgs (th) (Max) @ Id : 4V @ 83µA
    Kaari Gate (Qg) (Max) @ Vgs : 65nC @ 10V
    Vgs (Max) : ±20V
    Te Mahinga Whakauru (Ciss) (Max) @ Vds : 4320pF @ 50V
    Āhuahanga FET : -
    Te Whakamau Kaha (Max) : 125W (Tc)
    Taumaha Mahi : -55°C ~ 175°C (TJ)
    Momo Momo : Surface Mount
    Paetukutuku Pūrere Kaiwhakarato : D²PAK (TO-263AB)
    Paepae / Take : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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