Infineon Technologies - IRF3709STRLPBF

KEY Part #: K6419770

IRF3709STRLPBF Utu (USD) [130935Stock Ngahau]

  • 1 pcs$0.32313
  • 800 pcs$0.32152

Te waahanga waahanga:
IRF3709STRLPBF
Kaihanga:
Infineon Technologies
Whakaahuatanga Taipitopito:
MOSFET N-CH 30V 90A D2PAK.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Diode - Zener - Kotahi, Transistors - Bipolar (BJT) - Kotahi, I mua i te m, Transistors - Bipolar (BJT) - Arrays, I mua-Biased, Transistors - Whakahoahoa Whakahoahoa, Taumanako - SCR, Transistors - Bipolar (BJT) - Kotahi, Transistors - IGBTs - Arrays and Transistors - JFET ...
Whakapai Tinana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRF3709STRLPBF Nga Hua Hua

Te waahanga waahanga : IRF3709STRLPBF
Kaihanga : Infineon Technologies
Whakaahuatanga : MOSFET N-CH 30V 90A D2PAK
Toa : HEXFET®
Wāhanga wahi : Active
Momo FET : N-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 30V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 90A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 9 mOhm @ 15A, 10V
Vgs (th) (Max) @ Id : 3V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs : 41nC @ 5V
Vgs (Max) : ±20V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 2672pF @ 16V
Āhuahanga FET : -
Te Whakamau Kaha (Max) : 3.1W (Ta), 120W (Tc)
Taumaha Mahi : -55°C ~ 150°C (TJ)
Momo Momo : Surface Mount
Paetukutuku Pūrere Kaiwhakarato : D2PAK
Paepae / Take : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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