Toshiba Semiconductor and Storage - TPW1R306PL,L1Q

KEY Part #: K6416465

TPW1R306PL,L1Q Utu (USD) [66799Stock Ngahau]

  • 1 pcs$0.59163
  • 5,000 pcs$0.58868

Te waahanga waahanga:
TPW1R306PL,L1Q
Kaihanga:
Toshiba Semiconductor and Storage
Whakaahuatanga Taipitopito:
X35 PB-F POWER MOSFET TRANSISTOR.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Diode - Zener - Tuhinga, Transistors - Whakahoahoa Whakahoahoa, Transistors - Bipolar (BJT) - Arrays, Transistors - FETs, MOSFETs - Kotahi, Diode - Rectifiers - Arrays, Diode - Te Rerekē Rerekē (Kaimoana, Kaimoana), Diode - Kaiwhiwhi - Kotahi and Transistors - IGBTs - Arrays ...
Whakapai Tinana:
We specialize in Toshiba Semiconductor and Storage TPW1R306PL,L1Q electronic components. TPW1R306PL,L1Q can be shipped within 24 hours after order. If you have any demands for TPW1R306PL,L1Q, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TPW1R306PL,L1Q Nga Hua Hua

Te waahanga waahanga : TPW1R306PL,L1Q
Kaihanga : Toshiba Semiconductor and Storage
Whakaahuatanga : X35 PB-F POWER MOSFET TRANSISTOR
Toa : U-MOSIX-H
Wāhanga wahi : Active
Momo FET : N-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 60V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 260A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 1.29 mOhm @ 50A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 1mA
Kaari Gate (Qg) (Max) @ Vgs : 91nC @ 10V
Vgs (Max) : ±20V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 8100pF @ 30V
Āhuahanga FET : -
Te Whakamau Kaha (Max) : 960mW (Ta), 170W (Tc)
Taumaha Mahi : 175°C
Momo Momo : Surface Mount
Paetukutuku Pūrere Kaiwhakarato : 8-DSOP Advance
Paepae / Take : 8-PowerVDFN