Infineon Technologies - IPI120N08S403AKSA1

KEY Part #: K6417481

IPI120N08S403AKSA1 Utu (USD) [32194Stock Ngahau]

  • 1 pcs$1.28015
  • 500 pcs$0.94149

Te waahanga waahanga:
IPI120N08S403AKSA1
Kaihanga:
Infineon Technologies
Whakaahuatanga Taipitopito:
MOSFET N-CH TO262-3.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - Bipolar (BJT) - Arrays, Diode - Nga Kete Aiana, Transistors - Bipolar (BJT) - RF, Diode - Kaiwhiwhi - Kotahi, Transistors - Bipolar (BJT) - Kotahi, I mua i te m, Transistors - Whakahoahoa Whakahoahoa, Transistors - FETs, MOSFETs - Arrays and Tauhoko - TRIACs ...
Whakapai Tinana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPI120N08S403AKSA1 Nga Hua Hua

Te waahanga waahanga : IPI120N08S403AKSA1
Kaihanga : Infineon Technologies
Whakaahuatanga : MOSFET N-CH TO262-3
Toa : Automotive, AEC-Q101, OptiMOS™
Wāhanga wahi : Active
Momo FET : N-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 80V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 120A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) : 10V
Rds On (Max) @ Id, Vgs : 2.8 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id : 4V @ 223µA
Kaari Gate (Qg) (Max) @ Vgs : 167nC @ 10V
Vgs (Max) : ±20V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 11550pF @ 25V
Āhuahanga FET : -
Te Whakamau Kaha (Max) : 278W (Tc)
Taumaha Mahi : -55°C ~ 175°C (TJ)
Momo Momo : Through Hole
Paetukutuku Pūrere Kaiwhakarato : PG-TO262-3-1
Paepae / Take : TO-262-3 Long Leads, I²Pak, TO-262AA

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