Infineon Technologies - IPB093N04LGATMA1

KEY Part #: K6404586

[1961Stock Ngahau]


    Te waahanga waahanga:
    IPB093N04LGATMA1
    Kaihanga:
    Infineon Technologies
    Whakaahuatanga Taipitopito:
    MOSFET N-CH 40V 50A TO263-3.
    Ko te wa kaiarahi paerewa a te kaihanga:
    I roto i te taonga
    Te whare noho:
    Kotahi Tau
    Chip Mai:
    Hong Kong
    RoHS:
    Te tikanga utu:
    Te ara kaipuke:
    Ngā Kāwai Whānau:
    KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Te Tauira P taraihi Mana, Diode - Nga Kete Aiana, Transistors - Bipolar (BJT) - Arrays, I mua-Biased, Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Arrays, Taumanako - SCR, Transistors - FETs, MOSFETs - Arrays and Tauhou - IGBT - Mahi ...
    Whakapai Tinana:
    We specialize in Infineon Technologies IPB093N04LGATMA1 electronic components. IPB093N04LGATMA1 can be shipped within 24 hours after order. If you have any demands for IPB093N04LGATMA1, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IPB093N04LGATMA1 Nga Hua Hua

    Te waahanga waahanga : IPB093N04LGATMA1
    Kaihanga : Infineon Technologies
    Whakaahuatanga : MOSFET N-CH 40V 50A TO263-3
    Toa : OptiMOS™
    Wāhanga wahi : Obsolete
    Momo FET : N-Channel
    Hangarau : MOSFET (Metal Oxide)
    Whakahinuhinu ki te Rauemi Waiata (Vds) : 40V
    Akuanui - Tonu Tonu (Id) @ 25 ° C : 50A (Tc)
    Koraha Motuhake (RW RW On, Min Rds I) : 4.5V, 10V
    Rds On (Max) @ Id, Vgs : 9.3 mOhm @ 50A, 10V
    Vgs (th) (Max) @ Id : 2V @ 16µA
    Kaari Gate (Qg) (Max) @ Vgs : 28nC @ 10V
    Vgs (Max) : ±20V
    Te Mahinga Whakauru (Ciss) (Max) @ Vds : 2100pF @ 20V
    Āhuahanga FET : -
    Te Whakamau Kaha (Max) : 47W (Tc)
    Taumaha Mahi : -55°C ~ 175°C (TJ)
    Momo Momo : Surface Mount
    Paetukutuku Pūrere Kaiwhakarato : D²PAK (TO-263AB)
    Paepae / Take : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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