Infineon Technologies - IPD031N03LGBTMA1

KEY Part #: K6420186

IPD031N03LGBTMA1 Utu (USD) [168360Stock Ngahau]

  • 1 pcs$0.21969
  • 2,500 pcs$0.20154

Te waahanga waahanga:
IPD031N03LGBTMA1
Kaihanga:
Infineon Technologies
Whakaahuatanga Taipitopito:
MOSFET N-CH 30V 90A TO252-3.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - Bipolar (BJT) - Arrays, Taumanako - SCR, Transistors - JFET, Diode - Zener - Tuhinga, Diode - Kaiwhiwhi - Kotahi, Diode - RF, Transistors - Bipolar (BJT) - Kotahi and Diode - Te Rerekē Rerekē (Kaimoana, Kaimoana) ...
Whakapai Tinana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPD031N03LGBTMA1 Nga Hua Hua

Te waahanga waahanga : IPD031N03LGBTMA1
Kaihanga : Infineon Technologies
Whakaahuatanga : MOSFET N-CH 30V 90A TO252-3
Toa : OptiMOS™
Wāhanga wahi : Not For New Designs
Momo FET : N-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 30V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 90A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 3.1 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id : 2.2V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs : 51nC @ 10V
Vgs (Max) : ±20V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 5300pF @ 15V
Āhuahanga FET : -
Te Whakamau Kaha (Max) : 94W (Tc)
Taumaha Mahi : -55°C ~ 175°C (TJ)
Momo Momo : Surface Mount
Paetukutuku Pūrere Kaiwhakarato : PG-TO252-3
Paepae / Take : TO-252-3, DPak (2 Leads + Tab), SC-63

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