Vishay Siliconix - SQJQ402E-T1_GE3

KEY Part #: K6418851

SQJQ402E-T1_GE3 Utu (USD) [80462Stock Ngahau]

  • 1 pcs$0.48595

Te waahanga waahanga:
SQJQ402E-T1_GE3
Kaihanga:
Vishay Siliconix
Whakaahuatanga Taipitopito:
MOSFET N-CH 40V 200A POWERPAK8.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Diode - Zener - Tuhinga, Diode - Rectifiers - Arrays, Transistors - FETs, MOSFETs - Kotahi, Te Tauira P taraihi Mana, Tauhoko - TRIACs, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - RF and Transistors - Bipolar (BJT) - Kotahi, I mua i te m ...
Whakapai Tinana:
We specialize in Vishay Siliconix SQJQ402E-T1_GE3 electronic components. SQJQ402E-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQJQ402E-T1_GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SQJQ402E-T1_GE3 Nga Hua Hua

Te waahanga waahanga : SQJQ402E-T1_GE3
Kaihanga : Vishay Siliconix
Whakaahuatanga : MOSFET N-CH 40V 200A POWERPAK8
Toa : Automotive, AEC-Q101, TrenchFET®
Wāhanga wahi : Active
Momo FET : N-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 40V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 200A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 1.7 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs : 260nC @ 10V
Vgs (Max) : ±20V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 13500pF @ 20V
Āhuahanga FET : -
Te Whakamau Kaha (Max) : 150W (Tc)
Taumaha Mahi : -55°C ~ 175°C (TJ)
Momo Momo : Surface Mount
Paetukutuku Pūrere Kaiwhakarato : PowerPAK® 8 x 8
Paepae / Take : PowerPAK® 8 x 8 Single