Infineon Technologies - IPB65R190C6ATMA1

KEY Part #: K6404576

IPB65R190C6ATMA1 Utu (USD) [1963Stock Ngahau]

  • 1,000 pcs$0.67452

Te waahanga waahanga:
IPB65R190C6ATMA1
Kaihanga:
Infineon Technologies
Whakaahuatanga Taipitopito:
MOSFET N-CH 650V 20.2A TO263.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Arrays, I mua-Biased, Transistors - IGBTs - Kotahi, Transistors - Bipolar (BJT) - Kotahi, I mua i te m, Tauhoko - SCR - Mahi, Taumanako - SCR, Transistors - FETs, MOSFETs - Arrays and Transistors - JFET ...
Whakapai Tinana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPB65R190C6ATMA1 Nga Hua Hua

Te waahanga waahanga : IPB65R190C6ATMA1
Kaihanga : Infineon Technologies
Whakaahuatanga : MOSFET N-CH 650V 20.2A TO263
Toa : CoolMOS™
Wāhanga wahi : Obsolete
Momo FET : N-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 650V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 20.2A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) : 10V
Rds On (Max) @ Id, Vgs : 190 mOhm @ 7.3A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 730µA
Kaari Gate (Qg) (Max) @ Vgs : 73nC @ 10V
Vgs (Max) : ±20V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 1620pF @ 100V
Āhuahanga FET : -
Te Whakamau Kaha (Max) : 151W (Tc)
Taumaha Mahi : -55°C ~ 150°C (TJ)
Momo Momo : Surface Mount
Paetukutuku Pūrere Kaiwhakarato : D²PAK (TO-263AB)
Paepae / Take : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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