Infineon Technologies - IAUS165N08S5N029ATMA1

KEY Part #: K6401486

IAUS165N08S5N029ATMA1 Utu (USD) [42793Stock Ngahau]

  • 1 pcs$0.91372

Te waahanga waahanga:
IAUS165N08S5N029ATMA1
Kaihanga:
Infineon Technologies
Whakaahuatanga Taipitopito:
MOSFET N-CH 80V 660A PG-HSOG-8-1.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Diode - Te Rerekē Rerekē (Kaimoana, Kaimoana), Diode - Kaiwhiwhi - Kotahi, Transistors - Bipolar (BJT) - Arrays, I mua-Biased, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Kotahi, Diode - Rectifiers - Arrays, Transistors - FET, MOSFETs - RF and Tauhou - IGBT - Mahi ...
Whakapai Tinana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IAUS165N08S5N029ATMA1 Nga Hua Hua

Te waahanga waahanga : IAUS165N08S5N029ATMA1
Kaihanga : Infineon Technologies
Whakaahuatanga : MOSFET N-CH 80V 660A PG-HSOG-8-1
Toa : Automotive, AEC-Q101, OptiMOS™
Wāhanga wahi : Active
Momo FET : N-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 80V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 165A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) : 6V, 10V
Rds On (Max) @ Id, Vgs : 2.9 mOhm @ 80A, 10V
Vgs (th) (Max) @ Id : 3.8V @ 108µA
Kaari Gate (Qg) (Max) @ Vgs : 90nC @ 10V
Vgs (Max) : ±20V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 6370pF @ 40V
Āhuahanga FET : -
Te Whakamau Kaha (Max) : 167W (Tc)
Taumaha Mahi : -55°C ~ 175°C (TJ)
Momo Momo : Surface Mount
Paetukutuku Pūrere Kaiwhakarato : PG-HSOG-8-1
Paepae / Take : 8-PowerSMD, Gull Wing