IXYS - IXFN26N100P

KEY Part #: K6394816

IXFN26N100P Utu (USD) [2433Stock Ngahau]

  • 1 pcs$18.77645
  • 10 pcs$18.68304

Te waahanga waahanga:
IXFN26N100P
Kaihanga:
IXYS
Whakaahuatanga Taipitopito:
MOSFET N-CH 1000V 23A SOT-227B.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - Bipolar (BJT) - Kotahi, Transistors - Bipolar (BJT) - Arrays, I mua-Biased, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Kotahi, Transistors - JFET, Diode - Zener - Tuhinga, Diode - RF and Diode - Zener - Kotahi ...
Whakapai Tinana:
We specialize in IXYS IXFN26N100P electronic components. IXFN26N100P can be shipped within 24 hours after order. If you have any demands for IXFN26N100P, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFN26N100P Nga Hua Hua

Te waahanga waahanga : IXFN26N100P
Kaihanga : IXYS
Whakaahuatanga : MOSFET N-CH 1000V 23A SOT-227B
Toa : Polar™
Wāhanga wahi : Active
Momo FET : N-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 1000V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 23A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) : 10V
Rds On (Max) @ Id, Vgs : 390 mOhm @ 13A, 10V
Vgs (th) (Max) @ Id : 6.5V @ 1mA
Kaari Gate (Qg) (Max) @ Vgs : 197nC @ 10V
Vgs (Max) : ±30V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 11900pF @ 25V
Āhuahanga FET : -
Te Whakamau Kaha (Max) : 595W (Tc)
Taumaha Mahi : -55°C ~ 150°C (TJ)
Momo Momo : Chassis Mount
Paetukutuku Pūrere Kaiwhakarato : SOT-227B
Paepae / Take : SOT-227-4, miniBLOC