Vishay Siliconix - SI5511DC-T1-GE3

KEY Part #: K6523473

[4153Stock Ngahau]


    Te waahanga waahanga:
    SI5511DC-T1-GE3
    Kaihanga:
    Vishay Siliconix
    Whakaahuatanga Taipitopito:
    MOSFET N/P-CH 30V 4A 1206-8.
    Ko te wa kaiarahi paerewa a te kaihanga:
    I roto i te taonga
    Te whare noho:
    Kotahi Tau
    Chip Mai:
    Hong Kong
    RoHS:
    Te tikanga utu:
    Te ara kaipuke:
    Ngā Kāwai Whānau:
    KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - Bipolar (BJT) - Arrays, Transistors - FETs, MOSFETs - Kotahi, Diode - RF, Diode - Nga Kete Aiana, Transistors - IGBTs - Arrays, Transistors - Whakahoahoa Whakahoahoa, Tauhoko - TRIACs and Diode - Zener - Tuhinga ...
    Whakapai Tinana:
    We specialize in Vishay Siliconix SI5511DC-T1-GE3 electronic components. SI5511DC-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI5511DC-T1-GE3, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SI5511DC-T1-GE3 Nga Hua Hua

    Te waahanga waahanga : SI5511DC-T1-GE3
    Kaihanga : Vishay Siliconix
    Whakaahuatanga : MOSFET N/P-CH 30V 4A 1206-8
    Toa : TrenchFET®
    Wāhanga wahi : Obsolete
    Momo FET : N and P-Channel
    Āhuahanga FET : Logic Level Gate
    Whakahinuhinu ki te Rauemi Waiata (Vds) : 30V
    Akuanui - Tonu Tonu (Id) @ 25 ° C : 4A, 3.6A
    Rds On (Max) @ Id, Vgs : 55 mOhm @ 4.8A, 4.5V
    Vgs (th) (Max) @ Id : 2V @ 250µA
    Kaari Gate (Qg) (Max) @ Vgs : 7.1nC @ 5V
    Te Mahinga Whakauru (Ciss) (Max) @ Vds : 435pF @ 15V
    Te Mana - Max : 3.1W, 2.6W
    Taumaha Mahi : -55°C ~ 150°C (TJ)
    Momo Momo : Surface Mount
    Paepae / Take : 8-SMD, Flat Lead
    Paetukutuku Pūrere Kaiwhakarato : 1206-8 ChipFET™