Vishay Siliconix - SIS452DN-T1-GE3

KEY Part #: K6405443

SIS452DN-T1-GE3 Utu (USD) [1664Stock Ngahau]

  • 3,000 pcs$0.23023

Te waahanga waahanga:
SIS452DN-T1-GE3
Kaihanga:
Vishay Siliconix
Whakaahuatanga Taipitopito:
MOSFET N-CH 12V 35A 1212-8 PPAK.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Diode - RF, Transistors - Bipolar (BJT) - Arrays, I mua-Biased, Tauhou - IGBT - Mahi, Diode - Kaiwhiwhi - Kotahi, Taumanako - SCR, Diode - Te Rerekē Rerekē (Kaimoana, Kaimoana), Transistors - Whakahoahoa Whakahoahoa and Transistors - Bipolar (BJT) - RF ...
Whakapai Tinana:
We specialize in Vishay Siliconix SIS452DN-T1-GE3 electronic components. SIS452DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIS452DN-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIS452DN-T1-GE3 Nga Hua Hua

Te waahanga waahanga : SIS452DN-T1-GE3
Kaihanga : Vishay Siliconix
Whakaahuatanga : MOSFET N-CH 12V 35A 1212-8 PPAK
Toa : TrenchFET®
Wāhanga wahi : Obsolete
Momo FET : N-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 12V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 35A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 3.25 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id : 2.2V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs : 41nC @ 10V
Vgs (Max) : ±20V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 1700pF @ 6V
Āhuahanga FET : -
Te Whakamau Kaha (Max) : 3.8W (Ta), 52W (Tc)
Taumaha Mahi : -55°C ~ 150°C (TJ)
Momo Momo : Surface Mount
Paetukutuku Pūrere Kaiwhakarato : PowerPAK® 1212-8
Paepae / Take : PowerPAK® 1212-8