Infineon Technologies - IPDD60R125G7XTMA1

KEY Part #: K6417757

IPDD60R125G7XTMA1 Utu (USD) [40573Stock Ngahau]

  • 1 pcs$0.96369

Te waahanga waahanga:
IPDD60R125G7XTMA1
Kaihanga:
Infineon Technologies
Whakaahuatanga Taipitopito:
MOSFET NCH 650V 54A PG-HDSOP-10.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - Kotahi, I mua i te m, Tauhoko - SCR - Mahi, Diode - Nga Kete Aiana, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolar (BJT) - Kotahi, Transistors - IGBTs - Arrays and Transistors - FETs, MOSFETs - Kotahi ...
Whakapai Tinana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPDD60R125G7XTMA1 Nga Hua Hua

Te waahanga waahanga : IPDD60R125G7XTMA1
Kaihanga : Infineon Technologies
Whakaahuatanga : MOSFET NCH 650V 54A PG-HDSOP-10
Toa : CoolMOS™ G7
Wāhanga wahi : Active
Momo FET : N-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 600V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 20A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) : 10V
Rds On (Max) @ Id, Vgs : 125 mOhm @ 6.4A, 10V
Vgs (th) (Max) @ Id : 4V @ 320µA
Kaari Gate (Qg) (Max) @ Vgs : 27nC @ 10V
Vgs (Max) : ±20V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 1080pF @ 400V
Āhuahanga FET : -
Te Whakamau Kaha (Max) : 120W (Tc)
Taumaha Mahi : -55°C ~ 150°C (TJ)
Momo Momo : Surface Mount
Paetukutuku Pūrere Kaiwhakarato : PG-HDSOP-10-1
Paepae / Take : 10-PowerSOP Module

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