Infineon Technologies - BSZ123N08NS3GATMA1

KEY Part #: K6420262

BSZ123N08NS3GATMA1 Utu (USD) [175953Stock Ngahau]

  • 1 pcs$0.21021

Te waahanga waahanga:
BSZ123N08NS3GATMA1
Kaihanga:
Infineon Technologies
Whakaahuatanga Taipitopito:
MOSFET N-CH 80V 40A TSDSON-8.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - Whakahoahoa Whakahoahoa, Transistors - Bipolar (BJT) - RF, Transistors - Takenga Motuhake, Diode - Kaiwhiwhi - Kotahi, Transistors - FETs, MOSFETs - Arrays, Diode - Zener - Tuhinga, Transistors - FETs, MOSFETs - Kotahi and Diode - Nga Kete Aiana ...
Whakapai Tinana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSZ123N08NS3GATMA1 Nga Hua Hua

Te waahanga waahanga : BSZ123N08NS3GATMA1
Kaihanga : Infineon Technologies
Whakaahuatanga : MOSFET N-CH 80V 40A TSDSON-8
Toa : OptiMOS™
Wāhanga wahi : Active
Momo FET : N-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 80V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 10A (Ta), 40A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) : 6V, 10V
Rds On (Max) @ Id, Vgs : 12.3 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 33µA
Kaari Gate (Qg) (Max) @ Vgs : 25nC @ 10V
Vgs (Max) : ±20V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 1700pF @ 40V
Āhuahanga FET : -
Te Whakamau Kaha (Max) : 2.1W (Ta), 66W (Tc)
Taumaha Mahi : -55°C ~ 150°C (TJ)
Momo Momo : Surface Mount
Paetukutuku Pūrere Kaiwhakarato : PG-TSDSON-8
Paepae / Take : 8-PowerVDFN

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