Infineon Technologies - IPI084N06L3GXKSA1

KEY Part #: K6419247

IPI084N06L3GXKSA1 Utu (USD) [99327Stock Ngahau]

  • 1 pcs$0.39366
  • 500 pcs$0.34163

Te waahanga waahanga:
IPI084N06L3GXKSA1
Kaihanga:
Infineon Technologies
Whakaahuatanga Taipitopito:
MOSFET N-CH TO262-3.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - Bipolar (BJT) - Arrays, Transistors - Whakahoahoa Whakahoahoa, Transistors - Bipolar (BJT) - Arrays, I mua-Biased, Transistors - Bipolar (BJT) - Kotahi, Diode - Rectifiers - Arrays, Tauhou - IGBT - Mahi, Diode - Zener - Kotahi and Transistors - Bipolar (BJT) - Kotahi, I mua i te m ...
Whakapai Tinana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPI084N06L3GXKSA1 Nga Hua Hua

Te waahanga waahanga : IPI084N06L3GXKSA1
Kaihanga : Infineon Technologies
Whakaahuatanga : MOSFET N-CH TO262-3
Toa : OptiMOS™
Wāhanga wahi : Active
Momo FET : N-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 60V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 50A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 8.4 mOhm @ 50A, 10V
Vgs (th) (Max) @ Id : 2.2V @ 34µA
Kaari Gate (Qg) (Max) @ Vgs : 29nC @ 4.5V
Vgs (Max) : ±20V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 4900pF @ 30V
Āhuahanga FET : -
Te Whakamau Kaha (Max) : 79W (Tc)
Taumaha Mahi : -55°C ~ 175°C (TJ)
Momo Momo : Through Hole
Paetukutuku Pūrere Kaiwhakarato : PG-TO262-3-1
Paepae / Take : TO-262-3 Long Leads, I²Pak, TO-262AA