Infineon Technologies - IPN80R3K3P7ATMA1

KEY Part #: K6420906

IPN80R3K3P7ATMA1 Utu (USD) [289458Stock Ngahau]

  • 1 pcs$0.12778

Te waahanga waahanga:
IPN80R3K3P7ATMA1
Kaihanga:
Infineon Technologies
Whakaahuatanga Taipitopito:
COOLMOS P7 800V SOT-223.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - Bipolar (BJT) - Kotahi, I mua i te m, Diode - Te Rerekē Rerekē (Kaimoana, Kaimoana), Transistors - Bipolar (BJT) - Kotahi, Transistors - Whakahoahoa Whakahoahoa, Diode - Nga Kete Aiana, Transistors - IGBTs - Kotahi, Transistors - Bipolar (BJT) - RF and Diode - Zener - Tuhinga ...
Whakapai Tinana:
We specialize in Infineon Technologies IPN80R3K3P7ATMA1 electronic components. IPN80R3K3P7ATMA1 can be shipped within 24 hours after order. If you have any demands for IPN80R3K3P7ATMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPN80R3K3P7ATMA1 Nga Hua Hua

Te waahanga waahanga : IPN80R3K3P7ATMA1
Kaihanga : Infineon Technologies
Whakaahuatanga : COOLMOS P7 800V SOT-223
Toa : CoolMOS™ P7
Wāhanga wahi : Active
Momo FET : N-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 800V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 1.9A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) : 10V
Rds On (Max) @ Id, Vgs : 3.3 Ohm @ 590mA, 10V
Vgs (th) (Max) @ Id : 3.5V @ 30µA
Kaari Gate (Qg) (Max) @ Vgs : 5.8nC @ 10V
Vgs (Max) : ±20V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 120pF @ 500V
Āhuahanga FET : -
Te Whakamau Kaha (Max) : 6.1W (Tc)
Taumaha Mahi : -55°C ~ 150°C (TJ)
Momo Momo : Surface Mount
Paetukutuku Pūrere Kaiwhakarato : PG-SOT223
Paepae / Take : TO-261-3

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