SIE812DF-T1-E3 Utu (USD) [48253Stock Ngahau]
- 1 pcs$0.81033
- 3,000 pcs$0.75848
- Te waahanga waahanga:
- SIE812DF-T1-E3
- Kaihanga:
- Vishay Siliconix
- Whakaahuatanga Taipitopito:
- MOSFET N-CH 40V 60A 10-POLARPAK.
- Ko te wa kaiarahi paerewa a te kaihanga:
- I roto i te taonga
- Te whare noho:
- Kotahi Tau
- Chip Mai:
- Hong Kong
- RoHS:
- Te tikanga utu:
-
- Te ara kaipuke:
- Ngā Kāwai Whānau:
- KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Tauhou - IGBT - Mahi, Transistors - IGBTs - Kotahi, Diode - Rectifiers - Arrays, Transistors - Takenga Motuhake, Transistors - FETs, MOSFETs - Kotahi, Tauhoko - TRIACs, Te Tauira P taraihi Mana and Transistors - FET, MOSFETs - RF ...
- Whakapai Tinana:
- We specialize in Vishay Siliconix SIE812DF-T1-E3 electronic components. SIE812DF-T1-E3 can be shipped within 24 hours after order. If you have any demands for SIE812DF-T1-E3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIE812DF-T1-E3 Nga Hua Hua
Te waahanga waahanga :
SIE812DF-T1-E3
Kaihanga :
Vishay Siliconix
Whakaahuatanga :
MOSFET N-CH 40V 60A 10-POLARPAK
Toa :
TrenchFET®
Wāhanga wahi :
Active
Momo FET :
N-Channel
Hangarau :
MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) :
40V
Akuanui - Tonu Tonu (Id) @ 25 ° C :
60A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
2.6 mOhm @ 25A, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs :
170nC @ 10V
Vgs (Max) :
±20V
Te Mahinga Whakauru (Ciss) (Max) @ Vds :
8300pF @ 20V
Āhuahanga FET :
-
Te Whakamau Kaha (Max) :
5.2W (Ta), 125W (Tc)
Taumaha Mahi :
-55°C ~ 150°C (TJ)
Momo Momo :
Surface Mount
Paetukutuku Pūrere Kaiwhakarato :
10-PolarPAK® (L)
Paepae / Take :
10-PolarPAK® (L)
Nga Pūrongo Hou
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