Infineon Technologies - IRL6372TRPBF

KEY Part #: K6523183

IRL6372TRPBF Utu (USD) [239454Stock Ngahau]

  • 1 pcs$0.15447
  • 4,000 pcs$0.13247

Te waahanga waahanga:
IRL6372TRPBF
Kaihanga:
Infineon Technologies
Whakaahuatanga Taipitopito:
MOSFET 2N-CH 30V 8.1A 8SOIC.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Diode - Te Rerekē Rerekē (Kaimoana, Kaimoana), Transistors - IGBTs - Kotahi, Transistors - Bipolar (BJT) - Kotahi, I mua i te m, Transistors - FET, MOSFETs - RF, Transistors - JFET, Transistors - Whakahoahoa Whakahoahoa, Diode - RF and Tauhoko - DIACs, SIDACs ...
Whakapai Tinana:
We specialize in Infineon Technologies IRL6372TRPBF electronic components. IRL6372TRPBF can be shipped within 24 hours after order. If you have any demands for IRL6372TRPBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRL6372TRPBF Nga Hua Hua

Te waahanga waahanga : IRL6372TRPBF
Kaihanga : Infineon Technologies
Whakaahuatanga : MOSFET 2N-CH 30V 8.1A 8SOIC
Toa : HEXFET®
Wāhanga wahi : Active
Momo FET : 2 N-Channel (Dual)
Āhuahanga FET : Logic Level Gate
Whakahinuhinu ki te Rauemi Waiata (Vds) : 30V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 8.1A
Rds On (Max) @ Id, Vgs : 17.9 mOhm @ 8.1A, 4.5V
Vgs (th) (Max) @ Id : 1.1V @ 10µA
Kaari Gate (Qg) (Max) @ Vgs : 11nC @ 4.5V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 1020pF @ 25V
Te Mana - Max : 2W
Taumaha Mahi : -55°C ~ 150°C (TJ)
Momo Momo : Surface Mount
Paepae / Take : 8-SOIC (0.154", 3.90mm Width)
Paetukutuku Pūrere Kaiwhakarato : 8-SO

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