Infineon Technologies - IPI029N06NAKSA1

KEY Part #: K6398600

IPI029N06NAKSA1 Utu (USD) [44322Stock Ngahau]

  • 1 pcs$1.02435
  • 10 pcs$0.92484
  • 100 pcs$0.74317
  • 500 pcs$0.57804
  • 1,000 pcs$0.47895

Te waahanga waahanga:
IPI029N06NAKSA1
Kaihanga:
Infineon Technologies
Whakaahuatanga Taipitopito:
MOSFET N-CH 60V 24A TO262-3.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Diode - Rectifiers - Arrays, Tauhou - IGBT - Mahi, Diode - Zener - Kotahi, Tauhoko - SCR - Mahi, Transistors - Takenga Motuhake, Diode - Kaiwhiwhi - Kotahi, Transistors - FETs, MOSFETs - Kotahi and Transistors - Bipolar (BJT) - Arrays, I mua-Biased ...
Whakapai Tinana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPI029N06NAKSA1 Nga Hua Hua

Te waahanga waahanga : IPI029N06NAKSA1
Kaihanga : Infineon Technologies
Whakaahuatanga : MOSFET N-CH 60V 24A TO262-3
Toa : OptiMOS™
Wāhanga wahi : Active
Momo FET : N-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 60V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 24A (Ta), 100A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) : 6V, 10V
Rds On (Max) @ Id, Vgs : 2.9 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id : 2.8V @ 75µA
Kaari Gate (Qg) (Max) @ Vgs : 56nC @ 10V
Vgs (Max) : ±20V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 4100pF @ 30V
Āhuahanga FET : -
Te Whakamau Kaha (Max) : 3W (Ta), 136W (Tc)
Taumaha Mahi : -55°C ~ 175°C (TJ)
Momo Momo : Through Hole
Paetukutuku Pūrere Kaiwhakarato : PG-TO262-3
Paepae / Take : TO-262-3 Long Leads, I²Pak, TO-262AA

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