Vishay Siliconix - SIB900EDK-T1-GE3

KEY Part #: K6525448

SIB900EDK-T1-GE3 Utu (USD) [414489Stock Ngahau]

  • 1 pcs$0.08924
  • 3,000 pcs$0.08429

Te waahanga waahanga:
SIB900EDK-T1-GE3
Kaihanga:
Vishay Siliconix
Whakaahuatanga Taipitopito:
MOSFET 2N-CH 20V 1.5A SC-75-6.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Diode - Zener - Kotahi, Diode - Nga Kete Aiana, Transistors - Takenga Motuhake, Transistors - Bipolar (BJT) - Kotahi, Diode - RF, Diode - Te Rerekē Rerekē (Kaimoana, Kaimoana), Diode - Zener - Tuhinga and Tauhou - IGBT - Mahi ...
Whakapai Tinana:
We specialize in Vishay Siliconix SIB900EDK-T1-GE3 electronic components. SIB900EDK-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIB900EDK-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIB900EDK-T1-GE3 Nga Hua Hua

Te waahanga waahanga : SIB900EDK-T1-GE3
Kaihanga : Vishay Siliconix
Whakaahuatanga : MOSFET 2N-CH 20V 1.5A SC-75-6
Toa : TrenchFET®
Wāhanga wahi : Active
Momo FET : 2 N-Channel (Dual)
Āhuahanga FET : Logic Level Gate
Whakahinuhinu ki te Rauemi Waiata (Vds) : 20V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 1.5A
Rds On (Max) @ Id, Vgs : 225 mOhm @ 1.6A, 4.5V
Vgs (th) (Max) @ Id : 1V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs : 1.7nC @ 4.5V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : -
Te Mana - Max : 3.1W
Taumaha Mahi : -55°C ~ 150°C (TJ)
Momo Momo : Surface Mount
Paepae / Take : PowerPAK® SC-75-6L Dual
Paetukutuku Pūrere Kaiwhakarato : PowerPAK® SC-75-6L Dual