Vishay Siliconix - SI2335DS-T1-GE3

KEY Part #: K6406181

[1408Stock Ngahau]


    Te waahanga waahanga:
    SI2335DS-T1-GE3
    Kaihanga:
    Vishay Siliconix
    Whakaahuatanga Taipitopito:
    MOSFET P-CH 12V 3.2A SOT23-3.
    Ko te wa kaiarahi paerewa a te kaihanga:
    I roto i te taonga
    Te whare noho:
    Kotahi Tau
    Chip Mai:
    Hong Kong
    RoHS:
    Te tikanga utu:
    Te ara kaipuke:
    Ngā Kāwai Whānau:
    KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - Whakahoahoa Whakahoahoa, Te Tauira P taraihi Mana, Transistors - Bipolar (BJT) - RF, Diode - Rectifiers - Arrays, Transistors - FETs, MOSFETs - Kotahi, Tauhou - IGBT - Mahi, Transistors - Takenga Motuhake and Diode - Kaiwhiwhi - Kotahi ...
    Whakapai Tinana:
    We specialize in Vishay Siliconix SI2335DS-T1-GE3 electronic components. SI2335DS-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI2335DS-T1-GE3, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SI2335DS-T1-GE3 Nga Hua Hua

    Te waahanga waahanga : SI2335DS-T1-GE3
    Kaihanga : Vishay Siliconix
    Whakaahuatanga : MOSFET P-CH 12V 3.2A SOT23-3
    Toa : TrenchFET®
    Wāhanga wahi : Obsolete
    Momo FET : P-Channel
    Hangarau : MOSFET (Metal Oxide)
    Whakahinuhinu ki te Rauemi Waiata (Vds) : 12V
    Akuanui - Tonu Tonu (Id) @ 25 ° C : 3.2A (Ta)
    Koraha Motuhake (RW RW On, Min Rds I) : 1.8V, 4.5V
    Rds On (Max) @ Id, Vgs : 51 mOhm @ 4A, 4.5V
    Vgs (th) (Max) @ Id : 450mV @ 250µA (Min)
    Kaari Gate (Qg) (Max) @ Vgs : 15nC @ 4.5V
    Vgs (Max) : ±8V
    Te Mahinga Whakauru (Ciss) (Max) @ Vds : 1225pF @ 6V
    Āhuahanga FET : -
    Te Whakamau Kaha (Max) : 750mW (Ta)
    Taumaha Mahi : -55°C ~ 150°C (TJ)
    Momo Momo : Surface Mount
    Paetukutuku Pūrere Kaiwhakarato : SOT-23-3 (TO-236)
    Paepae / Take : TO-236-3, SC-59, SOT-23-3