Infineon Technologies - BSP295H6327XTSA1

KEY Part #: K6416403

BSP295H6327XTSA1 Utu (USD) [213153Stock Ngahau]

  • 1 pcs$0.17353
  • 1,000 pcs$0.12877

Te waahanga waahanga:
BSP295H6327XTSA1
Kaihanga:
Infineon Technologies
Whakaahuatanga Taipitopito:
MOSFET N-CH 60V 1.8A SOT223.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Diode - Te Rerekē Rerekē (Kaimoana, Kaimoana), Diode - Zener - Tuhinga, Transistors - FET, MOSFETs - RF, Te Tauira P taraihi Mana, Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Kotahi, Taumanako - SCR and Transistors - Bipolar (BJT) - Arrays, I mua-Biased ...
Whakapai Tinana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSP295H6327XTSA1 Nga Hua Hua

Te waahanga waahanga : BSP295H6327XTSA1
Kaihanga : Infineon Technologies
Whakaahuatanga : MOSFET N-CH 60V 1.8A SOT223
Toa : SIPMOS®
Wāhanga wahi : Active
Momo FET : N-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 60V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 1.8A (Ta)
Koraha Motuhake (RW RW On, Min Rds I) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 300 mOhm @ 1.8A, 10V
Vgs (th) (Max) @ Id : 1.8V @ 400µA
Kaari Gate (Qg) (Max) @ Vgs : 17nC @ 10V
Vgs (Max) : ±20V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 368pF @ 25V
Āhuahanga FET : -
Te Whakamau Kaha (Max) : 1.8W (Ta)
Taumaha Mahi : -55°C ~ 150°C (TJ)
Momo Momo : Surface Mount
Paetukutuku Pūrere Kaiwhakarato : PG-SOT223-4
Paepae / Take : TO-261-4, TO-261AA