SI8409DB-T1-E1 Utu (USD) [189774Stock Ngahau]
- 1 pcs$0.19588
- 3,000 pcs$0.19490
- Te waahanga waahanga:
- SI8409DB-T1-E1
- Kaihanga:
- Vishay Siliconix
- Whakaahuatanga Taipitopito:
- MOSFET P-CH 30V 4.6A 2X2 4-MFP.
- Ko te wa kaiarahi paerewa a te kaihanga:
- I roto i te taonga
- Te whare noho:
- Kotahi Tau
- Chip Mai:
- Hong Kong
- RoHS:
- Te tikanga utu:
-
- Te ara kaipuke:
- Ngā Kāwai Whānau:
- KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Diode - RF, Transistors - JFET, Transistors - IGBTs - Kotahi, Diode - Zener - Kotahi, Transistors - FET, MOSFETs - RF, Transistors - Bipolar (BJT) - Arrays, Tauhoko - TRIACs and Diode - Nga Kete Aiana ...
- Whakapai Tinana:
- We specialize in Vishay Siliconix SI8409DB-T1-E1 electronic components. SI8409DB-T1-E1 can be shipped within 24 hours after order. If you have any demands for SI8409DB-T1-E1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI8409DB-T1-E1 Nga Hua Hua
Te waahanga waahanga :
SI8409DB-T1-E1
Kaihanga :
Vishay Siliconix
Whakaahuatanga :
MOSFET P-CH 30V 4.6A 2X2 4-MFP
Toa :
TrenchFET®
Wāhanga wahi :
Active
Momo FET :
P-Channel
Hangarau :
MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) :
30V
Akuanui - Tonu Tonu (Id) @ 25 ° C :
4.6A (Ta)
Koraha Motuhake (RW RW On, Min Rds I) :
2.5V, 4.5V
Rds On (Max) @ Id, Vgs :
46 mOhm @ 1A, 4.5V
Vgs (th) (Max) @ Id :
1.4V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs :
26nC @ 4.5V
Vgs (Max) :
±12V
Te Mahinga Whakauru (Ciss) (Max) @ Vds :
-
Āhuahanga FET :
-
Te Whakamau Kaha (Max) :
1.47W (Ta)
Taumaha Mahi :
-55°C ~ 150°C (TJ)
Momo Momo :
Surface Mount
Paetukutuku Pūrere Kaiwhakarato :
4-Microfoot
Paepae / Take :
4-XFBGA, CSPBGA
Nga Pūrongo Hou
Kia Korero Ma Te Korero
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