Vishay Siliconix - SI5908DC-T1-GE3

KEY Part #: K6522069

SI5908DC-T1-GE3 Utu (USD) [142562Stock Ngahau]

  • 1 pcs$0.25945
  • 3,000 pcs$0.24363

Te waahanga waahanga:
SI5908DC-T1-GE3
Kaihanga:
Vishay Siliconix
Whakaahuatanga Taipitopito:
MOSFET 2N-CH 20V 4.4A 1206-8.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Diode - Zener - Tuhinga, Transistors - JFET, Transistors - Whakahoahoa Whakahoahoa, Tauhou - IGBT - Mahi, Diode - Kaiwhiwhi - Kotahi, Te Tauira P taraihi Mana, Diode - Zener - Kotahi and Transistors - IGBTs - Kotahi ...
Whakapai Tinana:
We specialize in Vishay Siliconix SI5908DC-T1-GE3 electronic components. SI5908DC-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI5908DC-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI5908DC-T1-GE3 Nga Hua Hua

Te waahanga waahanga : SI5908DC-T1-GE3
Kaihanga : Vishay Siliconix
Whakaahuatanga : MOSFET 2N-CH 20V 4.4A 1206-8
Toa : TrenchFET®
Wāhanga wahi : Active
Momo FET : 2 N-Channel (Dual)
Āhuahanga FET : Logic Level Gate
Whakahinuhinu ki te Rauemi Waiata (Vds) : 20V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 4.4A
Rds On (Max) @ Id, Vgs : 40 mOhm @ 4.4A, 4.5V
Vgs (th) (Max) @ Id : 1V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs : 7.5nC @ 4.5V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : -
Te Mana - Max : 1.1W
Taumaha Mahi : -55°C ~ 150°C (TJ)
Momo Momo : Surface Mount
Paepae / Take : 8-SMD, Flat Lead
Paetukutuku Pūrere Kaiwhakarato : 1206-8 ChipFET™