Vishay Siliconix - SIJ470DP-T1-GE3

KEY Part #: K6419617

SIJ470DP-T1-GE3 Utu (USD) [121329Stock Ngahau]

  • 1 pcs$0.30485
  • 3,000 pcs$0.28626

Te waahanga waahanga:
SIJ470DP-T1-GE3
Kaihanga:
Vishay Siliconix
Whakaahuatanga Taipitopito:
MOSFET N-CH 100V 58.8A PPAK SO-8.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Diode - Zener - Tuhinga, Diode - Kaiwhiwhi - Kotahi, Diode - RF, Transistors - Bipolar (BJT) - RF, Diode - Rectifiers - Arrays, Transistors - IGBTs - Arrays, Transistors - Whakahoahoa Whakahoahoa and Transistors - IGBTs - Kotahi ...
Whakapai Tinana:
We specialize in Vishay Siliconix SIJ470DP-T1-GE3 electronic components. SIJ470DP-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIJ470DP-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIJ470DP-T1-GE3 Nga Hua Hua

Te waahanga waahanga : SIJ470DP-T1-GE3
Kaihanga : Vishay Siliconix
Whakaahuatanga : MOSFET N-CH 100V 58.8A PPAK SO-8
Toa : ThunderFET®
Wāhanga wahi : Active
Momo FET : N-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 100V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 58.8A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) : 7.5V, 10V
Rds On (Max) @ Id, Vgs : 9.1 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs : 56nC @ 10V
Vgs (Max) : ±20V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 2050pF @ 50V
Āhuahanga FET : -
Te Whakamau Kaha (Max) : 5W (Ta), 56.8W (Tc)
Taumaha Mahi : -55°C ~ 150°C (TJ)
Momo Momo : Surface Mount
Paetukutuku Pūrere Kaiwhakarato : PowerPAK® SO-8
Paepae / Take : PowerPAK® SO-8

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