Vishay Siliconix - SQ2301ES-T1_GE3

KEY Part #: K6421360

SQ2301ES-T1_GE3 Utu (USD) [485597Stock Ngahau]

  • 1 pcs$0.07617
  • 3,000 pcs$0.06474

Te waahanga waahanga:
SQ2301ES-T1_GE3
Kaihanga:
Vishay Siliconix
Whakaahuatanga Taipitopito:
MOSFET P-CH 20V 3.9A TO236.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - Whakahoahoa Whakahoahoa, Transistors - FETs, MOSFETs - Arrays, Diode - Te Rerekē Rerekē (Kaimoana, Kaimoana), Transistors - IGBTs - Arrays, Transistors - JFET, Transistors - Takenga Motuhake, Te Tauira P taraihi Mana and Transistors - Bipolar (BJT) - RF ...
Whakapai Tinana:
We specialize in Vishay Siliconix SQ2301ES-T1_GE3 electronic components. SQ2301ES-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQ2301ES-T1_GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SQ2301ES-T1_GE3 Nga Hua Hua

Te waahanga waahanga : SQ2301ES-T1_GE3
Kaihanga : Vishay Siliconix
Whakaahuatanga : MOSFET P-CH 20V 3.9A TO236
Toa : Automotive, AEC-Q101, TrenchFET®
Wāhanga wahi : Active
Momo FET : P-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 20V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 3.9A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) : 2.5V, 4.5V
Rds On (Max) @ Id, Vgs : 120 mOhm @ 2.8A, 4.5V
Vgs (th) (Max) @ Id : 1.5V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs : 8nC @ 4.5V
Vgs (Max) : ±8V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 425pF @ 10V
Āhuahanga FET : -
Te Whakamau Kaha (Max) : 3W (Tc)
Taumaha Mahi : -55°C ~ 175°C (TA)
Momo Momo : Surface Mount
Paetukutuku Pūrere Kaiwhakarato : TO-236 (SOT-23)
Paepae / Take : TO-236-3, SC-59, SOT-23-3

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