Vishay Siliconix - SI4497DY-T1-GE3

KEY Part #: K6396114

SI4497DY-T1-GE3 Utu (USD) [97045Stock Ngahau]

  • 1 pcs$0.40291
  • 2,500 pcs$0.37749

Te waahanga waahanga:
SI4497DY-T1-GE3
Kaihanga:
Vishay Siliconix
Whakaahuatanga Taipitopito:
MOSFET P-CH 30V 36A 8-SOIC.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Te Tauira P taraihi Mana, Diode - Zener - Kotahi, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Kotahi, I mua i te m, Taumanako - SCR, Diode - Nga Kete Aiana and Diode - Kaiwhiwhi - Kotahi ...
Whakapai Tinana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI4497DY-T1-GE3 Nga Hua Hua

Te waahanga waahanga : SI4497DY-T1-GE3
Kaihanga : Vishay Siliconix
Whakaahuatanga : MOSFET P-CH 30V 36A 8-SOIC
Toa : TrenchFET®
Wāhanga wahi : Active
Momo FET : P-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 30V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 36A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 3.3 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs : 285nC @ 10V
Vgs (Max) : ±20V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 9685pF @ 15V
Āhuahanga FET : -
Te Whakamau Kaha (Max) : 3.5W (Ta), 7.8W (Tc)
Taumaha Mahi : -55°C ~ 150°C (TJ)
Momo Momo : Surface Mount
Paetukutuku Pūrere Kaiwhakarato : 8-SO
Paepae / Take : 8-SOIC (0.154", 3.90mm Width)