Infineon Technologies - BSP299H6327XUSA1

KEY Part #: K6416807

BSP299H6327XUSA1 Utu (USD) [140209Stock Ngahau]

  • 1 pcs$0.26380
  • 1,000 pcs$0.20158

Te waahanga waahanga:
BSP299H6327XUSA1
Kaihanga:
Infineon Technologies
Whakaahuatanga Taipitopito:
MOSFET N-CH 500V 0.4A SOT-223.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Tauhoko - TRIACs, Tauhou - IGBT - Mahi, Transistors - Bipolar (BJT) - Kotahi, Transistors - FETs, MOSFETs - Kotahi, Transistors - Takenga Motuhake, Diode - Te Rerekē Rerekē (Kaimoana, Kaimoana), Taumanako - SCR and Tauhoko - SCR - Mahi ...
Whakapai Tinana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSP299H6327XUSA1 Nga Hua Hua

Te waahanga waahanga : BSP299H6327XUSA1
Kaihanga : Infineon Technologies
Whakaahuatanga : MOSFET N-CH 500V 0.4A SOT-223
Toa : SIPMOS®
Wāhanga wahi : Not For New Designs
Momo FET : N-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 500V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 400mA (Ta)
Koraha Motuhake (RW RW On, Min Rds I) : 10V
Rds On (Max) @ Id, Vgs : 4 Ohm @ 400mA, 10V
Vgs (th) (Max) @ Id : 4V @ 1mA
Kaari Gate (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 400pF @ 25V
Āhuahanga FET : -
Te Whakamau Kaha (Max) : 1.8W (Ta)
Taumaha Mahi : -55°C ~ 150°C (TJ)
Momo Momo : Surface Mount
Paetukutuku Pūrere Kaiwhakarato : PG-SOT223-4
Paepae / Take : TO-261-4, TO-261AA

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