Infineon Technologies - IPP030N10N3GXKSA1

KEY Part #: K6416352

IPP030N10N3GXKSA1 Utu (USD) [14062Stock Ngahau]

  • 1 pcs$2.53402
  • 10 pcs$2.26123
  • 100 pcs$1.85411
  • 500 pcs$1.50136
  • 1,000 pcs$1.26621

Te waahanga waahanga:
IPP030N10N3GXKSA1
Kaihanga:
Infineon Technologies
Whakaahuatanga Taipitopito:
MOSFET N-CH 100V 100A TO220-3.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - Whakahoahoa Whakahoahoa, Transistors - Bipolar (BJT) - Arrays, Transistors - JFET, Transistors - Bipolar (BJT) - Kotahi, I mua i te m, Diode - RF, Diode - Nga Kete Aiana, Transistors - IGBTs - Arrays and Diode - Zener - Kotahi ...
Whakapai Tinana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPP030N10N3GXKSA1 Nga Hua Hua

Te waahanga waahanga : IPP030N10N3GXKSA1
Kaihanga : Infineon Technologies
Whakaahuatanga : MOSFET N-CH 100V 100A TO220-3
Toa : OptiMOS™
Wāhanga wahi : Active
Momo FET : N-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 100V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 100A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) : 6V, 10V
Rds On (Max) @ Id, Vgs : 3 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 275µA
Kaari Gate (Qg) (Max) @ Vgs : 206nC @ 10V
Vgs (Max) : ±20V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 14800pF @ 50V
Āhuahanga FET : -
Te Whakamau Kaha (Max) : 300W (Tc)
Taumaha Mahi : -55°C ~ 175°C (TJ)
Momo Momo : Through Hole
Paetukutuku Pūrere Kaiwhakarato : PG-TO220-3
Paepae / Take : TO-220-3