Infineon Technologies - IPP023NE7N3G

KEY Part #: K6400975

[3210Stock Ngahau]


    Te waahanga waahanga:
    IPP023NE7N3G
    Kaihanga:
    Infineon Technologies
    Whakaahuatanga Taipitopito:
    MOSFET N-CH 75V 120A TO220.
    Ko te wa kaiarahi paerewa a te kaihanga:
    I roto i te taonga
    Te whare noho:
    Kotahi Tau
    Chip Mai:
    Hong Kong
    RoHS:
    Te tikanga utu:
    Te ara kaipuke:
    Ngā Kāwai Whānau:
    KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - FETs, MOSFETs - Kotahi, Transistors - FET, MOSFETs - RF, Diode - Zener - Tuhinga, Diode - Nga Kete Aiana, Transistors - Bipolar (BJT) - RF, Diode - Zener - Kotahi, Transistors - IGBTs - Arrays and Diode - Te Rerekē Rerekē (Kaimoana, Kaimoana) ...
    Whakapai Tinana:
    We specialize in Infineon Technologies IPP023NE7N3G electronic components. IPP023NE7N3G can be shipped within 24 hours after order. If you have any demands for IPP023NE7N3G, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IPP023NE7N3G Nga Hua Hua

    Te waahanga waahanga : IPP023NE7N3G
    Kaihanga : Infineon Technologies
    Whakaahuatanga : MOSFET N-CH 75V 120A TO220
    Toa : OptiMOS™ 3
    Wāhanga wahi : Obsolete
    Momo FET : N-Channel
    Hangarau : MOSFET (Metal Oxide)
    Whakahinuhinu ki te Rauemi Waiata (Vds) : 75V
    Akuanui - Tonu Tonu (Id) @ 25 ° C : 120A (Tc)
    Koraha Motuhake (RW RW On, Min Rds I) : 10V
    Rds On (Max) @ Id, Vgs : 2.3 mOhm @ 100A, 10V
    Vgs (th) (Max) @ Id : 3.8V @ 273µA
    Kaari Gate (Qg) (Max) @ Vgs : 206nC @ 10V
    Vgs (Max) : ±20V
    Te Mahinga Whakauru (Ciss) (Max) @ Vds : 14400pF @ 37.5V
    Āhuahanga FET : -
    Te Whakamau Kaha (Max) : 300W (Tc)
    Taumaha Mahi : -55°C ~ 175°C (TJ)
    Momo Momo : Through Hole
    Paetukutuku Pūrere Kaiwhakarato : PG-TO220-3
    Paepae / Take : TO-220-3