SI4963BDY-T1-GE3 Utu (USD) [107279Stock Ngahau]
- 1 pcs$0.34478
- 2,500 pcs$0.32302
- Te waahanga waahanga:
- SI4963BDY-T1-GE3
- Kaihanga:
- Vishay Siliconix
- Whakaahuatanga Taipitopito:
- MOSFET 2P-CH 20V 4.9A 8SOIC.
- Ko te wa kaiarahi paerewa a te kaihanga:
- I roto i te taonga
- Te whare noho:
- Kotahi Tau
- Chip Mai:
- Hong Kong
- RoHS:
- Te tikanga utu:
-
- Te ara kaipuke:
- Ngā Kāwai Whānau:
- KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Diode - RF, Te Tauira P taraihi Mana, Transistors - IGBTs - Kotahi, Transistors - Whakahoahoa Whakahoahoa, Transistors - Takenga Motuhake, Transistors - Bipolar (BJT) - Kotahi, I mua i te m, Transistors - JFET and Transistors - FETs, MOSFETs - Arrays ...
- Whakapai Tinana:
- We specialize in Vishay Siliconix SI4963BDY-T1-GE3 electronic components. SI4963BDY-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI4963BDY-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI4963BDY-T1-GE3 Nga Hua Hua
Te waahanga waahanga :
SI4963BDY-T1-GE3
Kaihanga :
Vishay Siliconix
Whakaahuatanga :
MOSFET 2P-CH 20V 4.9A 8SOIC
Toa :
-
Wāhanga wahi :
Active
Momo FET :
2 P-Channel (Dual)
Āhuahanga FET :
Logic Level Gate
Whakahinuhinu ki te Rauemi Waiata (Vds) :
20V
Akuanui - Tonu Tonu (Id) @ 25 ° C :
4.9A
Rds On (Max) @ Id, Vgs :
32 mOhm @ 6.5A, 4.5V
Vgs (th) (Max) @ Id :
1.4V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs :
21nC @ 4.5V
Te Mahinga Whakauru (Ciss) (Max) @ Vds :
-
Te Mana - Max :
1.1W
Taumaha Mahi :
-55°C ~ 150°C (TJ)
Momo Momo :
Surface Mount
Paepae / Take :
8-SOIC (0.154", 3.90mm Width)
Paetukutuku Pūrere Kaiwhakarato :
8-SO
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