IPB530N15N3GATMA1 Utu (USD) [117397Stock Ngahau]
- 1 pcs$0.31506
- 1,000 pcs$0.28903
- Te waahanga waahanga:
- IPB530N15N3GATMA1
- Kaihanga:
- Infineon Technologies
- Whakaahuatanga Taipitopito:
- MOSFET N-CH 150V 21A TO263-3.
- Ko te wa kaiarahi paerewa a te kaihanga:
- I roto i te taonga
- Te whare noho:
- Kotahi Tau
- Chip Mai:
- Hong Kong
- RoHS:
- Te tikanga utu:
-
- Te ara kaipuke:
- Ngā Kāwai Whānau:
- KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - FET, MOSFETs - RF, Te Tauira P taraihi Mana, Transistors - JFET, Transistors - IGBTs - Arrays, Diode - Rectifiers - Arrays, Taumanako - SCR, Tauhoko - SCR - Mahi and Diode - Nga Kete Aiana ...
- Whakapai Tinana:
- We specialize in Infineon Technologies IPB530N15N3GATMA1 electronic components. IPB530N15N3GATMA1 can be shipped within 24 hours after order. If you have any demands for IPB530N15N3GATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPB530N15N3GATMA1 Nga Hua Hua
Te waahanga waahanga :
IPB530N15N3GATMA1
Kaihanga :
Infineon Technologies
Whakaahuatanga :
MOSFET N-CH 150V 21A TO263-3
Toa :
OptiMOS™
Wāhanga wahi :
Active
Momo FET :
N-Channel
Hangarau :
MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) :
150V
Akuanui - Tonu Tonu (Id) @ 25 ° C :
21A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) :
8V, 10V
Rds On (Max) @ Id, Vgs :
53 mOhm @ 18A, 10V
Vgs (th) (Max) @ Id :
4V @ 35µA
Kaari Gate (Qg) (Max) @ Vgs :
12nC @ 10V
Vgs (Max) :
±20V
Te Mahinga Whakauru (Ciss) (Max) @ Vds :
887pF @ 75V
Āhuahanga FET :
-
Te Whakamau Kaha (Max) :
68W (Tc)
Taumaha Mahi :
-55°C ~ 175°C (TJ)
Momo Momo :
Surface Mount
Paetukutuku Pūrere Kaiwhakarato :
D²PAK (TO-263AB)
Paepae / Take :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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