Infineon Technologies - SPD08P06PGBTMA1

KEY Part #: K6409687

SPD08P06PGBTMA1 Utu (USD) [240501Stock Ngahau]

  • 1 pcs$0.15379

Te waahanga waahanga:
SPD08P06PGBTMA1
Kaihanga:
Infineon Technologies
Whakaahuatanga Taipitopito:
MOSFET P-CH 60V 8.83A 3TO252.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - Bipolar (BJT) - Kotahi, I mua i te m, Transistors - Bipolar (BJT) - Arrays, I mua-Biased, Tauhoko - SCR - Mahi, Transistors - IGBTs - Arrays, Transistors - Takenga Motuhake, Tauhou - IGBT - Mahi, Diode - Te Rerekē Rerekē (Kaimoana, Kaimoana) and Transistors - FET, MOSFETs - RF ...
Whakapai Tinana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SPD08P06PGBTMA1 Nga Hua Hua

Te waahanga waahanga : SPD08P06PGBTMA1
Kaihanga : Infineon Technologies
Whakaahuatanga : MOSFET P-CH 60V 8.83A 3TO252
Toa : SIPMOS®
Wāhanga wahi : Active
Momo FET : P-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 60V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 8.83A (Ta)
Koraha Motuhake (RW RW On, Min Rds I) : 6.2V
Rds On (Max) @ Id, Vgs : 300 mOhm @ 10A, 6.2V
Vgs (th) (Max) @ Id : 4V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs : 13nC @ 10V
Vgs (Max) : ±20V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 420pF @ 25V
Āhuahanga FET : -
Te Whakamau Kaha (Max) : 42W (Tc)
Taumaha Mahi : -55°C ~ 175°C (TJ)
Momo Momo : Surface Mount
Paetukutuku Pūrere Kaiwhakarato : PG-TO252-3
Paepae / Take : TO-252-3, DPak (2 Leads + Tab), SC-63