Toshiba Semiconductor and Storage - TPN4R712MD,L1Q

KEY Part #: K6409736

TPN4R712MD,L1Q Utu (USD) [342569Stock Ngahau]

  • 1 pcs$0.11510
  • 5,000 pcs$0.11453

Te waahanga waahanga:
TPN4R712MD,L1Q
Kaihanga:
Toshiba Semiconductor and Storage
Whakaahuatanga Taipitopito:
MOSFET P-CH 20V 36A 8TSON ADV.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Diode - Zener - Kotahi, Diode - Nga Kete Aiana, Tauhoko - DIACs, SIDACs, Transistors - Bipolar (BJT) - Arrays, I mua-Biased, Tauhou - IGBT - Mahi, Diode - Rectifiers - Arrays, Transistors - FET, MOSFETs - RF and Transistors - Bipolar (BJT) - RF ...
Whakapai Tinana:
We specialize in Toshiba Semiconductor and Storage TPN4R712MD,L1Q electronic components. TPN4R712MD,L1Q can be shipped within 24 hours after order. If you have any demands for TPN4R712MD,L1Q, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TPN4R712MD,L1Q Nga Hua Hua

Te waahanga waahanga : TPN4R712MD,L1Q
Kaihanga : Toshiba Semiconductor and Storage
Whakaahuatanga : MOSFET P-CH 20V 36A 8TSON ADV
Toa : U-MOSVI
Wāhanga wahi : Active
Momo FET : P-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 20V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 36A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) : 2.5V, 4.5V
Rds On (Max) @ Id, Vgs : 4.7 mOhm @ 18A, 4.5V
Vgs (th) (Max) @ Id : 1.2V @ 1mA
Kaari Gate (Qg) (Max) @ Vgs : 65nC @ 5V
Vgs (Max) : ±12V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 4300pF @ 10V
Āhuahanga FET : -
Te Whakamau Kaha (Max) : 42W (Tc)
Taumaha Mahi : 150°C (TJ)
Momo Momo : Surface Mount
Paetukutuku Pūrere Kaiwhakarato : 8-TSON Advance (3.3x3.3)
Paepae / Take : 8-PowerVDFN