SQJ423EP-T1_GE3 Utu (USD) [174547Stock Ngahau]
- 1 pcs$0.21190
- 3,000 pcs$0.17907
- Te waahanga waahanga:
- SQJ423EP-T1_GE3
- Kaihanga:
- Vishay Siliconix
- Whakaahuatanga Taipitopito:
- MOSFET P-CH 40V 55A POWERPAKSO-8.
- Ko te wa kaiarahi paerewa a te kaihanga:
- I roto i te taonga
- Te whare noho:
- Kotahi Tau
- Chip Mai:
- Hong Kong
- RoHS:
- Te tikanga utu:
-
- Te ara kaipuke:
- Ngā Kāwai Whānau:
- KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - Bipolar (BJT) - Arrays, I mua-Biased, Tauhoko - DIACs, SIDACs, Diode - Kaiwhiwhi - Kotahi, Transistors - Bipolar (BJT) - Kotahi, Diode - Nga Kete Aiana, Te Tauira P taraihi Mana, Transistors - Bipolar (BJT) - Arrays and Diode - Te Rerekē Rerekē (Kaimoana, Kaimoana) ...
- Whakapai Tinana:
- We specialize in Vishay Siliconix SQJ423EP-T1_GE3 electronic components. SQJ423EP-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQJ423EP-T1_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQJ423EP-T1_GE3 Nga Hua Hua
Te waahanga waahanga :
SQJ423EP-T1_GE3
Kaihanga :
Vishay Siliconix
Whakaahuatanga :
MOSFET P-CH 40V 55A POWERPAKSO-8
Toa :
Automotive, AEC-Q101, TrenchFET®
Wāhanga wahi :
Active
Momo FET :
P-Channel
Hangarau :
MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) :
40V
Akuanui - Tonu Tonu (Id) @ 25 ° C :
55A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
14 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs :
130nC @ 10V
Vgs (Max) :
±20V
Te Mahinga Whakauru (Ciss) (Max) @ Vds :
4500pF @ 25V
Āhuahanga FET :
-
Te Whakamau Kaha (Max) :
68W (Tc)
Taumaha Mahi :
-55°C ~ 175°C (TJ)
Momo Momo :
Surface Mount
Paetukutuku Pūrere Kaiwhakarato :
PowerPAK® SO-8
Paepae / Take :
PowerPAK® SO-8
Nga Pūrongo Hou
Kia Korero Ma Te Korero
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