Vishay Siliconix - SIA910EDJ-T1-GE3

KEY Part #: K6525006

SIA910EDJ-T1-GE3 Utu (USD) [367832Stock Ngahau]

  • 1 pcs$0.10056
  • 3,000 pcs$0.09462

Te waahanga waahanga:
SIA910EDJ-T1-GE3
Kaihanga:
Vishay Siliconix
Whakaahuatanga Taipitopito:
MOSFET 2N-CH 12V 4.5A SC-70-6.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Diode - Te Rerekē Rerekē (Kaimoana, Kaimoana), Diode - Nga Kete Aiana, Transistors - Bipolar (BJT) - Kotahi, Diode - Zener - Kotahi, Diode - RF, Transistors - JFET, Transistors - Bipolar (BJT) - RF and Taumanako - SCR ...
Whakapai Tinana:
We specialize in Vishay Siliconix SIA910EDJ-T1-GE3 electronic components. SIA910EDJ-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIA910EDJ-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIA910EDJ-T1-GE3 Nga Hua Hua

Te waahanga waahanga : SIA910EDJ-T1-GE3
Kaihanga : Vishay Siliconix
Whakaahuatanga : MOSFET 2N-CH 12V 4.5A SC-70-6
Toa : TrenchFET®
Wāhanga wahi : Active
Momo FET : 2 N-Channel (Dual)
Āhuahanga FET : Logic Level Gate
Whakahinuhinu ki te Rauemi Waiata (Vds) : 12V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 4.5A
Rds On (Max) @ Id, Vgs : 28 mOhm @ 5.2A, 4.5V
Vgs (th) (Max) @ Id : 1V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs : 16nC @ 8V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 455pF @ 6V
Te Mana - Max : 7.8W
Taumaha Mahi : -55°C ~ 150°C (TJ)
Momo Momo : Surface Mount
Paepae / Take : PowerPAK® SC-70-6 Dual
Paetukutuku Pūrere Kaiwhakarato : PowerPAK® SC-70-6 Dual

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