Infineon Technologies - BSB056N10NN3GXUMA1

KEY Part #: K6416489

BSB056N10NN3GXUMA1 Utu (USD) [59902Stock Ngahau]

  • 1 pcs$0.65273
  • 5,000 pcs$0.59887

Te waahanga waahanga:
BSB056N10NN3GXUMA1
Kaihanga:
Infineon Technologies
Whakaahuatanga Taipitopito:
MOSFET N-CH 100V 9A WDSON-2.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Diode - Zener - Tuhinga, Transistors - Whakahoahoa Whakahoahoa, Tauhoko - DIACs, SIDACs, Diode - Zener - Kotahi, Transistors - FETs, MOSFETs - Kotahi, Transistors - JFET, Tauhou - IGBT - Mahi and Transistors - Bipolar (BJT) - Kotahi, I mua i te m ...
Whakapai Tinana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSB056N10NN3GXUMA1 Nga Hua Hua

Te waahanga waahanga : BSB056N10NN3GXUMA1
Kaihanga : Infineon Technologies
Whakaahuatanga : MOSFET N-CH 100V 9A WDSON-2
Toa : OptiMOS™
Wāhanga wahi : Active
Momo FET : N-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 100V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 9A (Ta), 83A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) : 6V, 10V
Rds On (Max) @ Id, Vgs : 5.6 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 100µA
Kaari Gate (Qg) (Max) @ Vgs : 74nC @ 10V
Vgs (Max) : ±20V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 5500pF @ 50V
Āhuahanga FET : -
Te Whakamau Kaha (Max) : 2.8W (Ta), 78W (Tc)
Taumaha Mahi : -40°C ~ 150°C (TJ)
Momo Momo : Surface Mount
Paetukutuku Pūrere Kaiwhakarato : MG-WDSON-2, CanPAK M™
Paepae / Take : 3-WDSON