Vishay Siliconix - SIZ998DT-T1-GE3

KEY Part #: K6524832

SIZ998DT-T1-GE3 Utu (USD) [136467Stock Ngahau]

  • 1 pcs$0.27104

Te waahanga waahanga:
SIZ998DT-T1-GE3
Kaihanga:
Vishay Siliconix
Whakaahuatanga Taipitopito:
MOSFET 2 N-CH 30V 8-POWERPAIR.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Diode - Rectifiers - Arrays, Tauhoko - SCR - Mahi, Diode - Kaiwhiwhi - Kotahi, Transistors - Bipolar (BJT) - Arrays, I mua-Biased, Tauhoko - TRIACs, Transistors - Bipolar (BJT) - RF, Tauhoko - DIACs, SIDACs and Te Tauira P taraihi Mana ...
Whakapai Tinana:
We specialize in Vishay Siliconix SIZ998DT-T1-GE3 electronic components. SIZ998DT-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIZ998DT-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIZ998DT-T1-GE3 Nga Hua Hua

Te waahanga waahanga : SIZ998DT-T1-GE3
Kaihanga : Vishay Siliconix
Whakaahuatanga : MOSFET 2 N-CH 30V 8-POWERPAIR
Toa : TrenchFET®
Wāhanga wahi : Active
Momo FET : 2 N-Channel (Dual), Schottky
Āhuahanga FET : Standard
Whakahinuhinu ki te Rauemi Waiata (Vds) : 30V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 20A (Tc), 60A (Tc)
Rds On (Max) @ Id, Vgs : 6.7 mOhm @ 15A, 10V, 2.8 mOhm @ 19A, 10V
Vgs (th) (Max) @ Id : 2.2V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs : 8.1nC @ 4.5V, 19.8nC @ 4.5V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 930pF @ 15V, 2620pF @ 15V
Te Mana - Max : 20.2W, 32.9W
Taumaha Mahi : -55°C ~ 150°C (TJ)
Momo Momo : Surface Mount
Paepae / Take : 8-PowerWDFN
Paetukutuku Pūrere Kaiwhakarato : 8-PowerPair®

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