Vishay Siliconix - SIA439EDJ-T1-GE3

KEY Part #: K6403916

SIA439EDJ-T1-GE3 Utu (USD) [2192Stock Ngahau]

  • 3,000 pcs$0.09441

Te waahanga waahanga:
SIA439EDJ-T1-GE3
Kaihanga:
Vishay Siliconix
Whakaahuatanga Taipitopito:
MOSFET P-CH 20V 28A SC-70-6L.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Te Tauira P taraihi Mana, Transistors - FETs, MOSFETs - Kotahi, Transistors - Takenga Motuhake, Diode - Te Rerekē Rerekē (Kaimoana, Kaimoana), Transistors - FET, MOSFETs - RF, Diode - Zener - Kotahi, Transistors - IGBTs - Arrays and Transistors - IGBTs - Kotahi ...
Whakapai Tinana:
We specialize in Vishay Siliconix SIA439EDJ-T1-GE3 electronic components. SIA439EDJ-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIA439EDJ-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIA439EDJ-T1-GE3 Nga Hua Hua

Te waahanga waahanga : SIA439EDJ-T1-GE3
Kaihanga : Vishay Siliconix
Whakaahuatanga : MOSFET P-CH 20V 28A SC-70-6L
Toa : TrenchFET®
Wāhanga wahi : Obsolete
Momo FET : P-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 20V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 28A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) : 1.8V, 4.5V
Rds On (Max) @ Id, Vgs : 16.5 mOhm @ 5A, 4.5V
Vgs (th) (Max) @ Id : 1V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs : 69nC @ 8V
Vgs (Max) : ±8V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 2410pF @ 10V
Āhuahanga FET : -
Te Whakamau Kaha (Max) : 3.5W (Ta), 19W (Tc)
Taumaha Mahi : -50°C ~ 150°C (TJ)
Momo Momo : Surface Mount
Paetukutuku Pūrere Kaiwhakarato : PowerPAK® SC-70-6 Single
Paepae / Take : PowerPAK® SC-70-6

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