Diodes Incorporated - DMN2014LHAB-7

KEY Part #: K6523167

DMN2014LHAB-7 Utu (USD) [437547Stock Ngahau]

  • 1 pcs$0.08453
  • 3,000 pcs$0.06662

Te waahanga waahanga:
DMN2014LHAB-7
Kaihanga:
Diodes Incorporated
Whakaahuatanga Taipitopito:
MOSFET 2N-CH 20V 9A 6-UDFN.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Arrays, Diode - RF, Transistors - Bipolar (BJT) - Kotahi, Transistors - FET, MOSFETs - RF, Diode - Nga Kete Aiana, Tauhoko - SCR - Mahi and Tauhoko - DIACs, SIDACs ...
Whakapai Tinana:
We specialize in Diodes Incorporated DMN2014LHAB-7 electronic components. DMN2014LHAB-7 can be shipped within 24 hours after order. If you have any demands for DMN2014LHAB-7, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMN2014LHAB-7 Nga Hua Hua

Te waahanga waahanga : DMN2014LHAB-7
Kaihanga : Diodes Incorporated
Whakaahuatanga : MOSFET 2N-CH 20V 9A 6-UDFN
Toa : -
Wāhanga wahi : Active
Momo FET : 2 N-Channel (Dual)
Āhuahanga FET : Logic Level Gate
Whakahinuhinu ki te Rauemi Waiata (Vds) : 20V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 9A
Rds On (Max) @ Id, Vgs : 13 mOhm @ 4A, 4.5V
Vgs (th) (Max) @ Id : 1.1V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs : 16nC @ 4.5V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 1550pF @ 10V
Te Mana - Max : 800mW
Taumaha Mahi : -55°C ~ 150°C (TJ)
Momo Momo : Surface Mount
Paepae / Take : 6-UFDFN Exposed Pad
Paetukutuku Pūrere Kaiwhakarato : U-DFN2030-6 (Type B)