Infineon Technologies - BSO200P03SHXUMA1

KEY Part #: K6420628

BSO200P03SHXUMA1 Utu (USD) [220828Stock Ngahau]

  • 1 pcs$0.16749
  • 2,500 pcs$0.15300

Te waahanga waahanga:
BSO200P03SHXUMA1
Kaihanga:
Infineon Technologies
Whakaahuatanga Taipitopito:
MOSFET P-CH 30V 7.4A 8DSO.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Diode - RF, Tauhoko - SCR - Mahi, Transistors - Bipolar (BJT) - Arrays, Diode - Zener - Tuhinga, Tauhoko - DIACs, SIDACs, Transistors - JFET, Transistors - Bipolar (BJT) - Arrays, I mua-Biased and Te Tauira P taraihi Mana ...
Whakapai Tinana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSO200P03SHXUMA1 Nga Hua Hua

Te waahanga waahanga : BSO200P03SHXUMA1
Kaihanga : Infineon Technologies
Whakaahuatanga : MOSFET P-CH 30V 7.4A 8DSO
Toa : OptiMOS™
Wāhanga wahi : Active
Momo FET : P-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 30V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 7.4A (Ta)
Koraha Motuhake (RW RW On, Min Rds I) : 10V
Rds On (Max) @ Id, Vgs : 20 mOhm @ 9.1A, 10V
Vgs (th) (Max) @ Id : 1.5V @ 100µA
Kaari Gate (Qg) (Max) @ Vgs : 54nC @ 10V
Vgs (Max) : ±25V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 2330pF @ 25V
Āhuahanga FET : -
Te Whakamau Kaha (Max) : 1.56W (Ta)
Taumaha Mahi : -55°C ~ 150°C (TJ)
Momo Momo : Surface Mount
Paetukutuku Pūrere Kaiwhakarato : PG-DSO-8
Paepae / Take : 8-SOIC (0.154", 3.90mm Width)