IPB80P04P4L08ATMA1 Utu (USD) [121996Stock Ngahau]
- 1 pcs$0.30319
- 1,000 pcs$0.27819
- Te waahanga waahanga:
- IPB80P04P4L08ATMA1
- Kaihanga:
- Infineon Technologies
- Whakaahuatanga Taipitopito:
- MOSFET P-CH TO263-3.
- Ko te wa kaiarahi paerewa a te kaihanga:
- I roto i te taonga
- Te whare noho:
- Kotahi Tau
- Chip Mai:
- Hong Kong
- RoHS:
- Te tikanga utu:
-
- Te ara kaipuke:
- Ngā Kāwai Whānau:
- KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - FETs, MOSFETs - Arrays, Transistors - FET, MOSFETs - RF, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Arrays, I mua-Biased, Taumanako - SCR, Transistors - Bipolar (BJT) - Arrays, Transistors - FETs, MOSFETs - Kotahi and Transistors - Bipolar (BJT) - Kotahi ...
- Whakapai Tinana:
- We specialize in Infineon Technologies IPB80P04P4L08ATMA1 electronic components. IPB80P04P4L08ATMA1 can be shipped within 24 hours after order. If you have any demands for IPB80P04P4L08ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPB80P04P4L08ATMA1 Nga Hua Hua
Te waahanga waahanga :
IPB80P04P4L08ATMA1
Kaihanga :
Infineon Technologies
Whakaahuatanga :
MOSFET P-CH TO263-3
Toa :
Automotive, AEC-Q101, OptiMOS™
Wāhanga wahi :
Active
Momo FET :
P-Channel
Hangarau :
MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) :
40V
Akuanui - Tonu Tonu (Id) @ 25 ° C :
80A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
7.9 mOhm @ 80A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 120µA
Kaari Gate (Qg) (Max) @ Vgs :
92nC @ 10V
Vgs (Max) :
±16V
Te Mahinga Whakauru (Ciss) (Max) @ Vds :
5430pF @ 25V
Āhuahanga FET :
-
Te Whakamau Kaha (Max) :
75W (Tc)
Taumaha Mahi :
-55°C ~ 175°C (TJ)
Momo Momo :
Surface Mount
Paetukutuku Pūrere Kaiwhakarato :
PG-TO263-3-2
Paepae / Take :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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