IXYS - IXTD4N80P-3J

KEY Part #: K6400782

[3278Stock Ngahau]


    Te waahanga waahanga:
    IXTD4N80P-3J
    Kaihanga:
    IXYS
    Whakaahuatanga Taipitopito:
    MOSFET N-CH 800.
    Ko te wa kaiarahi paerewa a te kaihanga:
    I roto i te taonga
    Te whare noho:
    Kotahi Tau
    Chip Mai:
    Hong Kong
    RoHS:
    Te tikanga utu:
    Te ara kaipuke:
    Ngā Kāwai Whānau:
    KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Diode - Zener - Kotahi, Transistors - Bipolar (BJT) - Arrays, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Kotahi, Te Tauira P taraihi Mana, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Arrays, I mua-Biased and Transistors - Takenga Motuhake ...
    Whakapai Tinana:
    We specialize in IXYS IXTD4N80P-3J electronic components. IXTD4N80P-3J can be shipped within 24 hours after order. If you have any demands for IXTD4N80P-3J, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IXTD4N80P-3J Nga Hua Hua

    Te waahanga waahanga : IXTD4N80P-3J
    Kaihanga : IXYS
    Whakaahuatanga : MOSFET N-CH 800
    Toa : PolarHV™
    Wāhanga wahi : Last Time Buy
    Momo FET : N-Channel
    Hangarau : MOSFET (Metal Oxide)
    Whakahinuhinu ki te Rauemi Waiata (Vds) : 800V
    Akuanui - Tonu Tonu (Id) @ 25 ° C : 3.6A (Tc)
    Koraha Motuhake (RW RW On, Min Rds I) : 10V
    Rds On (Max) @ Id, Vgs : 3.4 Ohm @ 1.8A, 10V
    Vgs (th) (Max) @ Id : 5.5V @ 100µA
    Kaari Gate (Qg) (Max) @ Vgs : 14.2nC @ 10V
    Vgs (Max) : ±30V
    Te Mahinga Whakauru (Ciss) (Max) @ Vds : 750pF @ 25V
    Āhuahanga FET : -
    Te Whakamau Kaha (Max) : 100W (Tc)
    Taumaha Mahi : -55°C ~ 150°C (TJ)
    Momo Momo : Surface Mount
    Paetukutuku Pūrere Kaiwhakarato : Die
    Paepae / Take : Die

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