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  1. Whare
  2. Nga Hua
  3. DRAM
  4. LPDDR4X
  5. K4U2E3S4AA-GUCL

Samsung Semiconductor - K4U2E3S4AA-GUCL

KEY Part #: K7359740

[26054Stock Ngahau]

    Te waahanga waahanga:
    K4U2E3S4AA-GUCL
    Kaihanga:
    Samsung Semiconductor
    Whakaahuatanga Taipitopito:
    12 Gb x32 4266 Mbps 1.8 / 1.1 / 0.6 V -40 ~ 125 °C 200FBGA Mass Production.
    Ko te wa kaiarahi paerewa a te kaihanga:
    I roto i te taonga
    Te whare noho:
    Kotahi Tau
    Chip Mai:
    Hong Kong
    RoHS:
    Te tikanga utu:
    Te ara kaipuke:
    Ngā Kāwai Whānau:
    KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: DDR4, MODULE, DDR3, LPDDR4X, HBM Flarebolt, GDDR5, LPDDR4 and LPDDR3 ...
    Whakapai Tinana:
    We specialize in Samsung Semiconductor K4U2E3S4AA-GUCL electronic components. K4U2E3S4AA-GUCL can be shipped within 24 hours after order. If you have any demands for K4U2E3S4AA-GUCL, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4U2E3S4AA-GUCL Nga Hua Hua

    Te waahanga waahanga : K4U2E3S4AA-GUCL
    Kaihanga : Samsung Semiconductor
    Whakaahuatanga : 12 Gb x32 4266 Mbps 1.8 / 1.1 / 0.6 V -40 ~ 125 °C 200FBGA Mass Production
    Toa : DDR3
    kiato : 12 Gb
    Org. : x32
    tere : 4266 Mbps
    ngaohiko : 1.8 / 1.1 / 0.6 V
    Temp. : -40 ~ 125 °C
    mōkī : 200FBGA
    Tūnga hua : Mass Production

    Nga Pūrongo Hou

    Unlocking the Power of Cloud Computing
    [Video] 5G memory solutions : 5G. All in the Memory.
    Samsung Honored for Outstanding Design and Engineering with 36 CES 2018 Innovation Awards
    Mass Production of Fifth-Generation V-NAND has Started
    5G and Memory - from Connected Thinking to Connected Living
    Inside the building blocks of the 5G future
    Samsung Begins Mass Production of Industry’s First 12Gb LPDDR5 Mobile DRAM for Premium Smartphones
    Exploring the Key Samsung Technologies That Enabled 10nm-Class DRAM
    Speed for the next generation of mobile devices
    Autonomous Driving and the Quest for Safety
    An Exclusive Look Inside Samsung’s Memory Exhibit at MWC
    The Ultra-Low Latency SSD, Z-SSD
    Kia Korero Ma Te Korero
    • M378A1K43BB1-CPB

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      DDR4 UDIMM 8 GB 1R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

    • M378A1K43BB2-CRC

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

    • M378A1K43BB2-CTD

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2666 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

    • M378A1K43CB2-CPB

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 8 Mass Production.

    • M378A1K43CB2-CRC

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 8 Mass Production.

    • M378A1K43CB2-CTD

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2666 Mbps 1.2 V 288 (1G x 8) x 8 Mass Production.

    Nga Wahanga Panu