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Mena kaore i te whakaatuhia to waahi, tohua tetahi o nga e whai ake nei:

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  1. Whare
  2. Nga Hua
  3. DRAM
  4. LPDDR4X
  5. K4U8E3S4AD-GHCL

Samsung Semiconductor - K4U8E3S4AD-GHCL

KEY Part #: K7359746

[14282Stock Ngahau]

    Te waahanga waahanga:
    K4U8E3S4AD-GHCL
    Kaihanga:
    Samsung Semiconductor
    Whakaahuatanga Taipitopito:
    8 Gb x32 4266 Mbps 1.8 / 1.1 / 0.6 V -40 ~ 105 °C 200FBGA Mass Production.
    Ko te wa kaiarahi paerewa a te kaihanga:
    I roto i te taonga
    Te whare noho:
    Kotahi Tau
    Chip Mai:
    Hong Kong
    RoHS:
    Te tikanga utu:
    Te ara kaipuke:
    Ngā Kāwai Whānau:
    KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: MODULE, DDR3, GDDR5, LPDDR4, SLC Nand, HBM Aquabolt, GDDR6 and LPDDR4X ...
    Whakapai Tinana:
    We specialize in Samsung Semiconductor K4U8E3S4AD-GHCL electronic components. K4U8E3S4AD-GHCL can be shipped within 24 hours after order. If you have any demands for K4U8E3S4AD-GHCL, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4U8E3S4AD-GHCL Nga Hua Hua

    Te waahanga waahanga : K4U8E3S4AD-GHCL
    Kaihanga : Samsung Semiconductor
    Whakaahuatanga : 8 Gb x32 4266 Mbps 1.8 / 1.1 / 0.6 V -40 ~ 105 °C 200FBGA Mass Production
    Toa : DDR3
    kiato : 8 Gb
    Org. : x32
    tere : 4266 Mbps
    ngaohiko : 1.8 / 1.1 / 0.6 V
    Temp. : -40 ~ 105 °C
    mōkī : 200FBGA
    Tūnga hua : Mass Production

    Nga Pūrongo Hou

    Samsung Announces Production of Industry’s First 2GB LPDDR3 Mobile Memory, Using 30nm-class Technology
    Samsung Begins Mass Production of Industry’s First 12Gb LPDDR5 Mobile DRAM for Premium Smartphones
    Automotive Driven by Small Packages Under the Hood
    The future of NAND technology
    Samsung Now Mass Producing Industry’s First, 20-Nanometer 6Gb LPDDR3 Mobile DRAM
    How Will 5G Impact on Memory?
    Speed for the next generation of mobile devices
    Driving the Artificial Intelligence Evolution with In-Memory Computing
    Unlocking the Power of Cloud Computing
    Evolving Mobile Solutions: Samsung at MWC 2018
    Samsung Z-SSD SZ985
    The Ultra-Low Latency SSD, Z-SSD
    Kia Korero Ma Te Korero
    • M378A1K43BB1-CPB

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      DDR4 UDIMM 8 GB 1R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

    • M378A1K43BB2-CRC

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

    • M378A1K43BB2-CTD

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2666 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

    • M378A1K43CB2-CPB

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 8 Mass Production.

    • M378A1K43CB2-CRC

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 8 Mass Production.

    • M378A1K43CB2-CTD

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2666 Mbps 1.2 V 288 (1G x 8) x 8 Mass Production.

    Nga Wahanga Panu