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Mena kaore i te whakaatuhia to waahi, tohua tetahi o nga e whai ake nei:

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  1. Whare
  2. Nga Hua
  3. DRAM
  4. LPDDR4
  5. K4F2E3S4HA-GHCL

Samsung Semiconductor - K4F2E3S4HA-GHCL

KEY Part #: K7359757

[18111Stock Ngahau]

    Te waahanga waahanga:
    K4F2E3S4HA-GHCL
    Kaihanga:
    Samsung Semiconductor
    Whakaahuatanga Taipitopito:
    12 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production.
    Ko te wa kaiarahi paerewa a te kaihanga:
    I roto i te taonga
    Te whare noho:
    Kotahi Tau
    Chip Mai:
    Hong Kong
    RoHS:
    Te tikanga utu:
    Te ara kaipuke:
    Ngā Kāwai Whānau:
    KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: LPDDR4, DDR4, SLC Nand, LPDDR3, LPDDR5, DDR3, LPDDR4X and HBM Aquabolt ...
    Whakapai Tinana:
    We specialize in Samsung Semiconductor K4F2E3S4HA-GHCL electronic components. K4F2E3S4HA-GHCL can be shipped within 24 hours after order. If you have any demands for K4F2E3S4HA-GHCL, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4F2E3S4HA-GHCL Nga Hua Hua

    Te waahanga waahanga : K4F2E3S4HA-GHCL
    Kaihanga : Samsung Semiconductor
    Whakaahuatanga : 12 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production
    Toa : DDR3
    kiato : 12 Gb
    Org. : x32
    tere : 4266 Mbps
    ngaohiko : 1.8 / 1.1 / 1.1 V
    Temp. : -40 ~ 105 °C
    mōkī : 200FBGA
    Tūnga hua : Mass Production

    Nga Pūrongo Hou

    Samsung Announces Production of Industry’s First 2GB LPDDR3 Mobile Memory, Using 30nm-class Technology
    Samsung Rolls Out Industry’s First 8GB LPDDR4 DRAM Package
    Samsung Honored for Outstanding Design and Engineering with 36 CES 2018 Innovation Awards
    Driving the Artificial Intelligence Evolution with In-Memory Computing
    Samsung Enhances Functional Safety to its Automotive Semiconductors with ISO 26262 Certification
    Samsung Now Mass Producing Industry’s Most Advanced 4Gb DDR3, Using 20 Nanometer Process Technology
    Samsung Now Mass Producing Industry’s First, 20-Nanometer 6Gb LPDDR3 Mobile DRAM
    Mission Peak Reference Server System for NGSFF SSD
    Inside the building blocks of the 5G future
    Speed for the next generation of mobile devices
    Samsung Showcases Its Latest Silicon Technologies for the Next Wave of Innovation at Annual Tech Day
    The future of NAND technology
    Kia Korero Ma Te Korero
    • M392A2K43BB0-CPB

      Samsung Semiconductor

      DDR4 VLP RDIMM 16 GB 2R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 18 EOL.

    • M392A2K43BB0-CRC

      Samsung Semiconductor

      DDR4 VLP RDIMM 16 GB 2R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 18 EOL.

    • M392A4K40BM0-CPB

      Samsung Semiconductor

      DDR4 VLP RDIMM 32 GB 2R x 4 2133 Mbps 1.2 V 288 (DDP4G x 4) x 18 EOL.

    • M392A4K40BM0-CRC

      Samsung Semiconductor

      DDR4 VLP RDIMM 32 GB 2R x 4 2400 Mbps 1.2 V 288 (DDP4G x 4) x 18 EOL.

    • M378A1K43BB1-CPB

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

    • M378A1K43BB2-CRC

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

    Nga Wahanga Panu