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  1. Whare
  2. Nga Hua
  3. DRAM
  4. LPDDR4
  5. K4FHE3D4HM-MHCJ

Samsung Semiconductor - K4FHE3D4HM-MHCJ

KEY Part #: K7359781

[20140Stock Ngahau]

    Te waahanga waahanga:
    K4FHE3D4HM-MHCJ
    Kaihanga:
    Samsung Semiconductor
    Whakaahuatanga Taipitopito:
    24 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production.
    Ko te wa kaiarahi paerewa a te kaihanga:
    I roto i te taonga
    Te whare noho:
    Kotahi Tau
    Chip Mai:
    Hong Kong
    RoHS:
    Te tikanga utu:
    Te ara kaipuke:
    Ngā Kāwai Whānau:
    KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: DDR3, HBM Flarebolt, LPDDR5, LPDDR4X, GDDR5, DDR4, GDDR6 and LPDDR4 ...
    Whakapai Tinana:
    We specialize in Samsung Semiconductor K4FHE3D4HM-MHCJ electronic components. K4FHE3D4HM-MHCJ can be shipped within 24 hours after order. If you have any demands for K4FHE3D4HM-MHCJ, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4FHE3D4HM-MHCJ Nga Hua Hua

    Te waahanga waahanga : K4FHE3D4HM-MHCJ
    Kaihanga : Samsung Semiconductor
    Whakaahuatanga : 24 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production
    Toa : DDR3
    kiato : 24 Gb
    Org. : x32
    tere : 3733 Mbps
    ngaohiko : 1.8 / 1.1 / 1.1 V
    Temp. : -40 ~ 105 °C
    mōkī : 200FBGA
    Tūnga hua : Mass Production

    Nga Pūrongo Hou

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    Samsung Begins Mass Production of Industry’s First 12Gb LPDDR5 Mobile DRAM for Premium Smartphones
    Samsung Electronics Takes 3D Memory to New Heights with Sixth-generation V-NAND SSDs for Client Computing
    Samsung Now Producing Industry’s Highest Density (3GB) LPDDR3 Mobile Memory for Smartphones
    The Ultra-Low Latency SSD, Z-SSD
    Kia Korero Ma Te Korero
    • M392A2K43BB0-CPB

      Samsung Semiconductor

      DDR4 VLP RDIMM 16 GB 2R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 18 EOL.

    • M392A2K43BB0-CRC

      Samsung Semiconductor

      DDR4 VLP RDIMM 16 GB 2R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 18 EOL.

    • M392A4K40BM0-CPB

      Samsung Semiconductor

      DDR4 VLP RDIMM 32 GB 2R x 4 2133 Mbps 1.2 V 288 (DDP4G x 4) x 18 EOL.

    • M392A4K40BM0-CRC

      Samsung Semiconductor

      DDR4 VLP RDIMM 32 GB 2R x 4 2400 Mbps 1.2 V 288 (DDP4G x 4) x 18 EOL.

    • M378A1K43BB1-CPB

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

    • M378A1K43BB2-CRC

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

    Nga Wahanga Panu