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  1. Whare
  2. Nga Hua
  3. DRAM
  4. LPDDR4
  5. K4F6E3S4HM-GHCL

Samsung Semiconductor - K4F6E3S4HM-GHCL

KEY Part #: K7359767

[23172Stock Ngahau]

    Te waahanga waahanga:
    K4F6E3S4HM-GHCL
    Kaihanga:
    Samsung Semiconductor
    Whakaahuatanga Taipitopito:
    16 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production.
    Ko te wa kaiarahi paerewa a te kaihanga:
    I roto i te taonga
    Te whare noho:
    Kotahi Tau
    Chip Mai:
    Hong Kong
    RoHS:
    Te tikanga utu:
    Te ara kaipuke:
    Ngā Kāwai Whānau:
    KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: GDDR6, DDR4, HBM Flarebolt, LPDDR4X, SLC Nand, LPDDR3, LPDDR4 and MODULE ...
    Whakapai Tinana:
    We specialize in Samsung Semiconductor K4F6E3S4HM-GHCL electronic components. K4F6E3S4HM-GHCL can be shipped within 24 hours after order. If you have any demands for K4F6E3S4HM-GHCL, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4F6E3S4HM-GHCL Nga Hua Hua

    Te waahanga waahanga : K4F6E3S4HM-GHCL
    Kaihanga : Samsung Semiconductor
    Whakaahuatanga : 16 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production
    Toa : DDR3
    kiato : 16 Gb
    Org. : x32
    tere : 4266 Mbps
    ngaohiko : 1.8 / 1.1 / 1.1 V
    Temp. : -40 ~ 105 °C
    mōkī : 200FBGA
    Tūnga hua : Mass Production

    Nga Pūrongo Hou

    An Exclusive Look Inside Samsung’s Memory Exhibit at MWC
    Samsung Begins Mass Production of Industry’s First 12Gb LPDDR5 Mobile DRAM for Premium Smartphones
    Samsung Showcases Its Latest Silicon Technologies for the Next Wave of Innovation at Annual Tech Day
    Samsung Announces Production of Industry’s First 2GB LPDDR3 Mobile Memory, Using 30nm-class Technology
    Autonomous Driving and the Quest for Safety
    Driving the Artificial Intelligence Evolution with In-Memory Computing
    Samsung Now Mass Producing Industry’s First, 20-Nanometer 6Gb LPDDR3 Mobile DRAM
    5G and Memory - from Connected Thinking to Connected Living
    Samsung Z-SSD SZ985
    Samsung Memory Solutions for Automotive
    Evolving Mobile Solutions: Samsung at MWC 2018
    High Bandwidth Memory is Catching on for Data-intensive Computing
    Kia Korero Ma Te Korero
    • M392A2K43BB0-CPB

      Samsung Semiconductor

      DDR4 VLP RDIMM 16 GB 2R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 18 EOL.

    • M392A2K43BB0-CRC

      Samsung Semiconductor

      DDR4 VLP RDIMM 16 GB 2R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 18 EOL.

    • M392A4K40BM0-CPB

      Samsung Semiconductor

      DDR4 VLP RDIMM 32 GB 2R x 4 2133 Mbps 1.2 V 288 (DDP4G x 4) x 18 EOL.

    • M392A4K40BM0-CRC

      Samsung Semiconductor

      DDR4 VLP RDIMM 32 GB 2R x 4 2400 Mbps 1.2 V 288 (DDP4G x 4) x 18 EOL.

    • M378A1K43BB1-CPB

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

    • M378A1K43BB2-CRC

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

    Nga Wahanga Panu