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Mena kaore i te whakaatuhia to waahi, tohua tetahi o nga e whai ake nei:

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  1. Whare
  2. Nga Hua
  3. DRAM
  4. DDR3
  5. K4B2G1646F-BHMA

Samsung Semiconductor - K4B2G1646F-BHMA

KEY Part #: K7359661

[17431Stock Ngahau]

    Te waahanga waahanga:
    K4B2G1646F-BHMA
    Kaihanga:
    Samsung Semiconductor
    Whakaahuatanga Taipitopito:
    2 Gb 128M x 16 1866 Mbps 1.35 V -40 ~ 105 °C 96FBGA Mass Production.
    Ko te wa kaiarahi paerewa a te kaihanga:
    I roto i te taonga
    Te whare noho:
    Kotahi Tau
    Chip Mai:
    Hong Kong
    RoHS:
    Te tikanga utu:
    Te ara kaipuke:
    Ngā Kāwai Whānau:
    KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: LPDDR5, GDDR6, SLC Nand, MODULE, GDDR5, LPDDR4, HBM Aquabolt and LPDDR3 ...
    Whakapai Tinana:
    We specialize in Samsung Semiconductor K4B2G1646F-BHMA electronic components. K4B2G1646F-BHMA can be shipped within 24 hours after order. If you have any demands for K4B2G1646F-BHMA, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4B2G1646F-BHMA Nga Hua Hua

    Te waahanga waahanga : K4B2G1646F-BHMA
    Kaihanga : Samsung Semiconductor
    Whakaahuatanga : 2 Gb 128M x 16 1866 Mbps 1.35 V -40 ~ 105 °C 96FBGA Mass Production
    Toa : DDR3
    kiato : 2 Gb
    Org. : 128M x 16
    tere : 1866 Mbps
    ngaohiko : 1.35 V
    Temp. : -40 ~ 105 °C
    mōkī : 96FBGA
    Tūnga hua : Mass Production

    Nga Pūrongo Hou

    High Bandwidth Memory is Catching on for Data-intensive Computing
    Samsung Begins Mass Production of Industry’s First 12Gb LPDDR5 Mobile DRAM for Premium Smartphones
    Evolving Mobile Solutions: Samsung at MWC 2018
    The Ultra-Low Latency SSD, Z-SSD
    Samsung wins 46 CES 2020 Innovation Awards for Outstanding Design and Engineering
    Mission Peak Reference Server System for NGSFF SSD
    Driving the Artificial Intelligence Evolution with In-Memory Computing
    Samsung Now Mass Producing Industry’s Most Advanced 4Gb DDR3, Using 20 Nanometer Process Technology
    Exploring the Key Samsung Technologies That Enabled 10nm-Class DRAM
    Automotive Driven by Small Packages Under the Hood
    Samsung Showcases Its Latest Silicon Technologies for the Next Wave of Innovation at Annual Tech Day
    Speed for the next generation of mobile devices
    Kia Korero Ma Te Korero
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    • K3UH6H60BM-EGCL

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      48 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 376FBGA Mass Production.

    • K3UH7H70AM-AGCL

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    Nga Wahanga Panu